2SC5200L-O-T3P-T [UTC]

Power Bipolar Transistor,;


型号：	2SC5200L-O-T3P-T
厂家：	Unisonic Technologies
描述：	Power Bipolar Transistor,
文件：	总4页 (文件大小：192K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC5200

NPN EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER

APPLICATIONS



FEATURES

* Recommended for 100W High Fidelity Audio Frequency

Amplifier Output Stage.

* Complementary to UTC 2SA1943

 ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

2SC5200L-x-T3P-T

Halogen Free

2SC5200G-x-T3P-T

2SC5200G-x-T3B-T

2SC5200G-x-T3L-T

TO-3P

TO-3PB

TO-3PL

Tube

2SC5200L-x-T3B-T

2SC5200L-x-T3L-T

Note: Pin Assignment: B: Base

C: Collector

E: Emitter



MARKING

www.unisonic.com.tw

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QW-R214-005.C

2SC5200

NPN EPITAXIAL SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

230

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

230

Base Current

I_B

1.5

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

P_C

150

°C

T_J

+150

-55 ~ 150

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_{(BR) CEO}

V_CE(SAT)

V_BE

TEST CONDITIONS

I_C= 50mA, I_B=0

MIN TYP MAX UNIT

Collector-Emitter Breakdown Voltage

Collector-Emitter Saturation Voltage

Base -Emitter Voltage

230

I_C= 8A_,I_B= 0.8A

0.4

1.0

3.0

1.5

5.0

160

V_CE= 5V, I_C= 7A

V_CB= 230V, I_E=0

V_EB= 5V, I_C=0

Collector Cut-off Current

I_CBO

μA

Emitter Cut-off Current

I_EBO

h_FE1

V_CE= 5V, I_C= 1A

V_CE= 5V, I_C= 7A

V_CE= 5V, I_C= 1A

V_CB= 10V, I_E=0, f=1MHz

DC Current Gain

h_FE2

Transition Frequency

f_T

MHz

Collector Output Capacitance

C_OB

200



CLASSIFICATION OF h_FE1

RANK

Range

55 ~ 110

80 ~ 160

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R214-005.C

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2SC5200

NPN EPITAXIAL SILICON TRANSISTOR



TYPICAL CHARACTERISTICS

Collector-Emitter Saturation Voltage vs.

Collector Current

DC Current Gain vs. Collector Current

300

T_C=100℃

100

-25

0.3

0.1

T_C=100℃

-25

COMMON EMITTER

I_C/ I_B= 10

0.03

0.01

COMMON EMITTER

I_C/ I_B= 10

100

0.1

100

0.01

0.1

0.01

Collector Current, I_C(A)

Safe Operating Area

_CMAX. (PULSED)

30 ^I

I_CMAX.

1ms

(CONTINUOUS)

10ms

5^{DC OPERATION}

100ms

3^T^C^=25°C

0.5

0.3

SINGLE NONREPETITIVE

PULSE T_C= 25°C

CURVES MUST BE

DERATED LINEARLY

WITH INCREASE IN

TEMPERATURE.

V_CEO

MAX.

0.1

0.05

0.03

100

300 1000

Collector-Emitter Voltage, V_CE(V)

UNISONIC TECHNOLOGIES CO., LTD

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QW-R214-005.C

www.unisonic.com.tw

2SC5200

NPN EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all UTC products described or contained herein.

UTC products are not designed for use in life support appliances, devices or systems where malfunction

of these products can be reasonably expected to result in personal injury. Reproduction in whole or in

part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to

make changes to information published in this document, including without limitation specifications and

product descriptions, at any time and without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R214-005.C

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