2SC5200OL [UTC]
Transistor;
| 型号： | 2SC5200OL |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
APPLICATIONS
FEATURES
* Recommended for 100W High Fidelity Audio Frequency
Amplifier Output Stage.
* Complementary to UTC 2SA1943
TO-3PL
*Pb-free plating product number: 2SC5200L
ABSOLUTE MAXIMUM RATINGS (TC = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
V
V
A
Collector-Base Voltage
230
230
5
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
15
Base Current
IB
PC
TJ
Tstg
1.5
150
150
A
Collector Power Dissipation (Tc=25℃)
W
℃
℃
Junction Temperature
Storage Temperature Range
-55 ~ 150
ELECTRICAL CHARACTERISTICS (Tc=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
V
V
μA
μA
Collector-Emitter Breakdown Voltage V(BR) CEO IC= 50mA, IB=0
230
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE (sat) IC= 8A, IB= 0.8A
0.40
1.0
3.0
1.5
5.0
5.0
160
VBE
ICBO
IEBO
hFE1
hFE2
fT
VCE= 5V, IC= 7A
VCB = 230V, IE=0
VEB= 5V, IC=0
VCE= 5V, IC= 1A
VCE= 5V, IC= 7A
VCE= 5V, IC= 1A
VCB= 10V, IE=0, f=1MHz
55
35
60
30
200
Transition Frequency
Collector Output Capacitance
MHz
pF
Cob
Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160
CLASSIFICATION OF HFE1
RANK
Range
R
O
55 ~ 110
80 ~ 160
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R214-005,A
UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
IC - VCE
IC - VBE
-20
-16
-12
-20
-16
-12
COMMON EMITTER
COMMON EMITTER
VCE = 5V
TC =25℃
800
600
400
300
250
200
150
TC =100℃
100
IB = 10mA
-8
-4
0
-8
-4
0
50
8
25
-25
40
30
20
4
0
2
6
10
0.8
1.6
0
0.4
1.2
2.0
COLLECTOR-EMITTER VOLTAGE, VCE (V)
BASE-EMITTER VOLTAGE, VBE (V)
VCE(sat) - IC
hFE - IC
3
1
300
100
TC =100℃
25
-25
0.3
0.1
30
10
TC =100℃
-25
25
0.03
0.01
3
1
COMMON EMITTER
COMMON EMITTER
IC / IB = 10
IC / IB = 10
10
0.01
0.1
10
100
1
0.1
1
0.01
100
COLLECTOR CURRENT, IC (A)
SAFE OPERATING AREA
COLLECTOR CURRENT, IC (A)
50
30
IC MAX. (PULSED)※
1ms※
IC MAX.
(CONTINUOUS)
10ms※
10
DC OPERATION
5
3
TC =25℃
100ms※
1
0.5
0.3
※SINGLE NONREPETITIVE
PULSE TC = 25℃
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
0.1
0.05
0.03
VCEO MAX.
300 1000
10
100
3
30
COLLECTOR-EMITTER VOLTAGE, VCE (V)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R214-005,A
UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R214-005,A
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