2SC5200RL [UTC]

Transistor;


型号：	2SC5200RL
厂家：	Unisonic Technologies
描述：	Transistor
文件：	总3页 (文件大小：93K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

POWER AMPLIFIER

APPLICATIONS

FEATURES

* Recommended for 100W High Fidelity Audio Frequency

Amplifier Output Stage.

* Complementary to UTC 2SA1943

TO-3PL

*Pb-free plating product number: 2SC5200L

ABSOLUTE MAXIMUM RATINGS (TC = 25℃)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

230

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

I_B

P_C

T_J

Tstg

1.5

150

Collector Power Dissipation (Tc=25℃)

℃

Junction Temperature

Storage Temperature Range

-55 ~ 150

ELECTRICAL CHARACTERISTICS (Tc=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

μA

Collector-Emitter Breakdown Voltage V_{(BR) CEO}I_C= 50mA, I_B=0

230

Collector-Emitter Saturation Voltage

Base -Emitter Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

V_{CE (sat)}I_C= 8A_,I_B= 0.8A

0.40

1.0

3.0

1.5

5.0

160

V_BE

I_CBO

I_EBO

h_FE1

h_FE2

V_CE= 5V, I_C= 7A

V_CB= 230V, I_E=0

V_EB= 5V, I_C=0

V_CE= 5V, I_C= 1A

V_CE= 5V, I_C= 7A

V_CE= 5V, I_C= 1A

V_CB= 10V, I_E=0, f=1MHz

200

Transition Frequency

Collector Output Capacitance

MHz

Cob

Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160

CLASSIFICATION OF HFE1

RANK

Range

55 ~ 110

80 ~ 160

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R214-005,A

UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

IC - VCE

IC - VBE

-20

-16

-12

-20

-16

-12

COMMON EMITTER

VCE = 5V

TC =25℃

800

600

400

300

250

200

150

TC =100℃

100

IB = 10mA

-8

-4

-8

-4

-25

0.8

1.6

0.4

1.2

2.0

COLLECTOR-EMITTER VOLTAGE, VCE (V)

BASE-EMITTER VOLTAGE, VBE (V)

VCE(sat) - IC

hFE - IC

300

100

TC =100℃

-25

0.3

0.1

TC =100℃

-25

0.03

0.01

COMMON EMITTER

I^C/ IB = 10

IC / IB = 10

0.01

0.1

100

0.1

0.01

100

COLLECTOR CURRENT, IC (A)

SAFE OPERATING AREA

COLLECTOR CURRENT, IC (A)

IC MAX. (PULSED)※

1ms※

IC MAX.

(CONTINUOUS)

10ms※

DC OPERATION

TC =25℃

100ms※

0.5

0.3

※SINGLE NONREPETITIVE

PULSE TC = 25℃

CURVES MUST BE

DERATED LINEARLY

WITH INCREASE IN

TEMPERATURE.

0.1

0.05

0.03

VCEO MAX.

300 1000

100

COLLECTOR-EMITTER VOLTAGE, VCE (V)

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R214-005,A

UTC 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R214-005,A

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