2SC5353BG-T6C-K [UTC]

HIGH VOLTAGE NPN TRANSISTOR; 高压NPN晶体管


型号：	2SC5353BG-T6C-K
厂家：	Unisonic Technologies
描述：	HIGH VOLTAGE NPN TRANSISTOR 高压NPN晶体管晶体晶体管功率双极晶体管开关高压局域网
文件：	总4页 (文件大小：251K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SC5353B

NPN SILICON TRANSISTOR

HIGH VOLTAGE NPN

TRANSISTOR

TO-126

TO-220

TO-126C

TO-220F

DESCRIPTION

Switching Regulator and High Voltage Switching Applications

High-Speed DC-DC Converter Applications

FEATURES

* Excellent switching times: t_R= 0.7μs_(MAX), t_F= 0.5μs _(MAX)

* High collectors breakdown voltage: V_CEO= 750V

TO-252

TO-251

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

2SC5353BL-T60-K

2SC5353BL-T6C-K

2SC5353BL-TA3-T

2SC5353BL-TF3-T

2SC5353BL-TM3-T

2SC5353BL-TN3-R

2SC5353BG-T60-K

2SC5353BG-T6C-K

2SC5353BG-TA3-T

2SC5353BG-TF3-T

2SC5353BG-TM3-T

2SC5353BG-TN3-R

TO-126

TO-126C

TO-220

TO-220F

TO-251

TO-252

Bulk

Tube

Tape Reel

www.unisonic.com.tw

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NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

900

750

Collector Current

Base Current

Pulse

I_CP

I_B

TO-220F/TO-126/TO-126C

TO-220

°C

Power Dissipation

P_D

TO-251/TO-252

Junction Temperature

Storage Temperature

T_J

+150

-40 ~ +150

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

BV_CBOI_C=1 mA, I_E= 0

BV_CEOI_C=10 mA, I_B= 0

900

750

V_CB=720V, I_E= 0

I_CBO

I_EBO

h_FE1

h_FE2

100

µA

Emitter Cut-off Current

V_EB=7V, I_C= 0

V_CE=5 V, I_C=1 mA

V_CE=5 V, I_C=0.15 A

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

V_CE(SAT)I_C=1.2 A, I_B=0.24 A

V_BE(SAT)I_C=1.2 A, I_B=0.24 A

1.0

1.3

Rise Time

t_R

0.7

µS

Switching Time

Storage Time

t_STG

4.0

0.5

µS

Fall Time

t_F

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NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

Collector-Emitter Saturation Voltage vs.

Collector Current

DC Current Gain vs. Collector Current

1000

100

Common emitter

I_C/I_B= 3

T_C=100℃

-20

Common emitter

V_CE= 5 V

0.1

-20

0.05

0.001

0.01

0.1

0.01

0.1

Collector Current, I_C(A)

UNISONIC TECHNOLOGIES CO., LTD

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2SC5353B

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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