2SD1616-G-T92-K [UTC]

NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管


型号：	2SD1616-G-T92-K
厂家：	Unisonic Technologies
描述：	NPN EPITAXIAL SILICON TRANSISTOR NPN外延硅晶体管晶体晶体管
文件：	总4页 (文件大小：67K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SD1616/A

NPN SILICON TRANSISTOR

NPN EPITAXIAL SILICON

TRANSISTOR

SOT-89

TO-92

SIP-3

ꢀ

DESCRIPTION

* Audio frequency power amplifier

* Medium speed switching

TO-92SP

*Pb-free plating product number:

2SD1616L/2SD1616AL

ꢀ ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

2SD1616-x-AB3-R

2SD1616-x-G03-K

2SD1616-x-T92-B

2SD1616-x-T92-K

2SD1616-x-T9S-K

2SD1616A-x-AB3-R

2SD1616A-x-G03-K

2SD1616A-x-T92-B

2SD1616A-x-T92-K

2SD1616A-x-T9S-K

2SD1616L-x-AB3-R

2SD1616L-x-G03-K

2SD1616L-x-T92-B

2SD1616L-x-T92-K

2SD1616L-x-T9S-K

2SD1616AL-x-AB3-R

2SD1616AL-x-G03-K

2SD1616AL-x-T92-B

2SD1616AL-x-T92-K

2SD1616AL-x-T9S-K

SOT-89

SIP-3

Tape Reel

Bulk

TO-92

Tape Box

Bulk

TO-92

TO-92SP

SOT-89

SIP-3

Bulk

Tape Reel

Bulk

TO-92

Tape Box

Bulk

TO-92

TO-92SP

Bulk

2SD1616L-x-AB3-T

(1)Packing Type

(2)Package Type

(3)Rank

(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube

(2) AB3: SOT-89, G03: SIP-3, T92: TO-92,

T9S: TO-92S

(3) x: refer to Classification of h

FE1

(4)Lead Plating

(4) L: Lead Free Plating, Blank: Pb/Sn

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2SD1616/A

NPN SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (Ta=25

°C)

PARAMETER

SYMBOL

V_CBO

RATINGS

UNIT

2SD1616

Collector to Base Voltage

2SD1616A

2SD1616

120

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V_CEO

2SD1616A

V_EBO

I_C

Pulse(Note2)

I_CM

P_C

Total Power Dissipation

Junction Temperature

Storage Temperature

750

T_J

+150

-55 ~ +150

T_STG

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width

ELECTRICAL CHARACTERISTICS (Ta=25

PARAMETER SYMBOL

≤10ms, Duty cycle<50%

ꢀ

C, unless otherwise specified.)

TEST CONDITIONS MIN

TYP MAX UNIT

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base Emitter On Voltage

V_{CE (SAT)}I_C=1A, I_B=50mA

V_{BE (SAT)}I_C=1A, I_B=50mA

V_{BE (ON)}V_CE=2V, I_C=50mA

0.15

0.9

0.3

1.2

600

640

700

100

600

400

Collector Cut-Off Current

I_CBO

I_EBO

V_CB=60V

V_EB= 6V

Emitter Cut-Off Current

2SD1616

135

h_FE1

V_CE=2V, I_C=100mA

DC Current Gain

2SD1616A

h_FE2

f_T

V_CE=2V, I_C=1A

Transition Frequency

Output Capacitance

Turn On Time

V_CE=2V, I_C=100mA

V_CB=10V, f =1MHz

100

160

MHz

C_ob

t_ON

t_STG

t_F

V_CE=10V, I_C=100mA

I_B1= -I_B2=10mA

0.07

0.95

0.07

Storage Time

Fall Time

V_BE(OFF)= -2 ~ -3V

ꢀ

CLASSIFICATION OF h_FE1

RANK

h_FE1

135 ~ 270

200 ~ 400

300 ~ 600

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2SD1616/A

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

CurrentGain-BandwidthProduct

Collector OutputCapacitance

1000

I_E=0

f=1.0MHz

V_CE=2V

500

300

500

300

100

0.01 0.03

0.1

0.3

30 50 100

300

Collector-Base Voltage, V_CB(V)

Collector Current, I_C(A)

Static Characteristic

100

I_B=5.0mA

I_B=300μA

I_B=3.5mA

I_B=3.0mA

I_B=2.5mA

0.8

I_B=250μA

I_B=200μA

I ^B

0.6

0.4

0.2

I_B=2.0mA

I_B=1.5mA

I_B=150μA

I_B=100μA

I_B=50μA

I_B=1.0mA

I_B=0.5mA

0.2

0.4

0.6

0.8

Collector-Emitter Voltage , V_CE(V)

Collector-Emitter Voltage, V_CE(V)

Switching Time

V_CC=10V

I_C=10×I_B1= -10×I_B2

t_STG

0.5

0.3

0.1

t_F

0.05

0.03

t_ON

0.01

0.001 0.003 0.01 0.030.05 0.1

0.30.5

CollectorCurrent, I_C(A)

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2SD1616/A

NPN SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS(Cont.)

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

DC Current Gain

1000

V_CE=2V

I_C=20I_B

500

300

V_{BE (SAT)}

100

0.5

0.3

0.1

V_{CE (SAT)}

0.05

0.03

0.01

0.030.05 0.1

0.30.5

3 5 10

0.01 0.030.050.1

0.30.5

3 5 10

Collector Current, I_C(A)

Safe OperatingArea

Power Derating

0.8

0.6

pw=1ms

10ms

0.5

0.3

0.4

0.2

0.1

0.05

0.03

0.01

25 50

75 100 125 150 175 200

30 50 100

300

Collector-Emitter Voltage, V_CE(V)

AmbientTemperature, Ta (℃)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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