2SD1691L-X-TF1-T [UTC]
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT; 低集电极饱和电压大电流
| 型号： | 2SD1691L-X-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
| 文件： | 总4页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1691
NPN SILICON TRANSISTOR
LOW COLLECTOR
SATURATION VOLTAGE
LARGE CURRENT
1
TO-220
FEATURES
*High Power Dissipation
*Complementary to 2SB1151
1
TO-220F1
1
TO-126
1
TO-126C
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free Plating
2SD1691L-x-T60-K
2SD1691L-x-T6C-K
2SD1691L-x-TA3-T
2SD1691L-x- TF1-T
Halogen Free
1
E
E
B
B
2
C
C
C
C
3
B
B
E
E
2SD1691G-x-T60-K
2SD1691G-x-T6C-K
2SD1691G-x-TA3-T
2SD1691G-x- TF1-T
TO-126
TO-126C
TO-220
Bulk
Bulk
Tube
Tube
TO-220F1
www.unisonic.com.tw
1 of 4
Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R204-015,C
2SD1691
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Ic
RATING
UNIT
Collector-Base Voltage
60
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
60
7
DC
5
Collector Current
A
A
Pulse (PW≦10ms,Duty Cycle≦50%)
Icp
8
Base Current
IB
1
20
TO-126/ TO-126C
Collector Power Dissipation (Tc=25°C) TO-220F1
TO-220
Pc
23
W
54
Junction Temperature
TJ
150
°C
°C
Storage Temperature Range
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified )
CHARACTERISTIC
SYMBOL
ICBO
TEST CONDITIONS
VCB=50V,IE=0
MIN TYP MAX UNIT
Collector Cut-off Current
Emitter Cut-off Current
10
10
μA
μA
IEBO
VEB=7V,Ic=0
hFE1
VCE=1V,Ic=0.1A
VCE=1V,Ic=2A
VCE=2V,Ic=5A
60
160
50
DC Current Gain
hFE2
400
hFE3
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT) (Note) Ic=2A,IB=0.2A
VBE(SAT) (Note) Ic=2A,IB=0.2A
0.1
0.9
0.3
1.2
V
V
20μsec
Turn On Time
TON
0.2
1.1
1
OUTPUT
IB1
IB2
INPUT
IB1
5Ω
Storage Time
TSTG
2.5
Switching Time
μs
Ω
IB2
IB1=-IB2=0.2A
DUTY CYCLE≦1%
Vcc=10V
Fall Time
TF
0.2
1
Note: Pulse test: PW≦50μS, Duty Cycle≦2% Pulse
CLASSIFICATION OF hFE2
RANK
O
Y
RANGE
160-320
200-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R204-015,C
www.unisonic.com.tw
2SD1691
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R204-015,C
www.unisonic.com.tw
2SD1691
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R204-015,C
www.unisonic.com.tw
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