2SD1802L-X-TM3-T [UTC]
HIGH CURRENT SWITCHING APPLICATION; 大电流开关应用
| 型号： | 2SD1802L-X-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH CURRENT SWITCHING APPLICATION |
| 文件： | 总3页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1802
NPN SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SD1802 applies to voltage regulators, relay drivers,
lamp drivers and electrical equipment.
FEATURES
* Adoption of FBET, MBIT processes
* Large current capacity and wide ASO
* Low collector-to-emitter saturation voltage
* Fast switching speed
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
2SD1802L-x-TM3-T
2SD1802L-x-TN3-T
2SD1802L-x-TN3-R
2SD1802G-x-TM3-T
2SD1802G-x-TN3-T
2SD1802G-x-TN3-R
TO-251
TO-252
TO-252
Tube
Tube
Tape Reel
Note: Pin Assignment: B: Base C: Collector E: Emitter
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R209-001.Ba
2SD1802
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA= 25℃, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
TC=25℃
60
V
V
V
VCEO
50
VEBO
6
1
Pc
W
15
Collector Current (DC)
Collector Current (PULSE)
Junction Temperature
Storage Temperature
IC
ICP
3
6
A
A
TJ
150
℃
℃
TSTG
-55 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=40V, IE =0
MIN
TYP
MAX
1
UNIT
μA
μA
Collector Cutoff Current
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
1
hFE1
hFE2
fT
VCE=2V, IC=100mA
VCE=2V, IC=3A
100
35
560
DC Current Gain (note)
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-on Time
VCE=10V, IC=50mA
VCB=10V, f=1MHz
150
25
MHz
pF
V
COB
VCE(SAT) IC= 2A, IB=100mA
VBE(SAT) IC= 2A, IB=100mA
V(BR)CBO IC= 10μA, IE=0
V(BR)CEO IC= 1mA, RBE=∞
V(BR)EBO IE= 10μA, IC=0
tON
tSTG
tF
0.19
0.94
0.5
1.2
V
60
50
6
V
V
V
See test circuit
See test circuit
See test circuit
70
650
35
ns
ns
ns
Storage Time
Fall Time
CLASSIFICATION OF hFE1
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R209-001.Ba
www.unisonic.com.tw
2SD1802
NPN SILICON TRANSISTOR
TEST CIRCUIT (Unit : resistance : Ω, capacitance : F)
PW=20µS
Duty Cycle≤1%
IB
1
INPUT
RB
OUTPUT
IB2
25
VR
50
+
100
+
µ
µ
470
-5V
25V
Ic=10IB1= -10IB2=1A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R209-001.Ba
www.unisonic.com.tw
相关型号：
2SD1802RTP-FA
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 3 PIN
ONSEMI
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