2SD1803-TM3-T [UTC]
HIGH CURRENT SWITCHING APPLICATION; 大电流开关应用
| 型号： | 2SD1803-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH CURRENT SWITCHING APPLICATION |
| 文件： | 总5页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
ꢀ DESCRIPTION
The UTC 2SD1803 applies to relay drivers, high-speed
inverters, converters ,and other general high-current switching
applications.
1
ꢀ FEATURES
*Low collector-to-emitter saturation voltage.
*High current and high fT.
*Excellent linerarity of hFE.
TO-251
*Pb-free plating product number:2SD1803L
*Fast switching time.
ꢀ
PIN CONFIGURATION
PIN NO.
PIN NAME
BASE
1
2
3
COLLECTOR
EMITTER
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Tube
Normal
Lead free
2SD1803-TM3-T 2SD1803L-TM3-T
TO-251
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
1
QW-R213-007,B
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
60
50
V
6
V
DC
5
A
Collector Current
Power Dissipation
PULSE
Tc=25℃
Ta=25℃
ICM
8
20
A
W
W
℃
℃
PD
1
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
MIN
60
50
6
TYP
MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V
V
V
1
1
µA
µA
Emitter Cutoff Current
IEBO
hFE1
VCE=2V, IC=0.5A
VCE=2V, IC=4A
VCE=5V, Ic=1A
VCB=10V, f=1MHz
IC=3A, IB=0.15A
IC=3A, IB=0.15A
See Test Circuit
See Test Circuit
See Test Circuit
70
35
400
DC Current Gain
hFE2
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
Turn-on Time
fT
180
40
MHz
pF
mV
V
Cob
VCE(sat)
VBE(sat)
tON
220
0.95
50
400
1.3
ns
Storage Time
tS
500
20
ns
Fall Time
tF
ns
ꢀ
CLASSIFICATION OF hFE 1
RANK
Q
R
S
T
RANGE
70 ~ 140
100 ~ 200
140 ~ 280
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R213-007,B
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TEST CIRCUIT
IB1
INPUT
R
B
OUTPUT
IB2
R
L
VR
50
+
+
100μ
470μ
25V
PW=20μS
-5V
Duty Cycle≦1%
Ic=10IB1=-10IB2=2A
(Unit : (resistance : Ω, capacitance : F))
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R213-007,B
2SD1803
■ TYPICAL CHARACTERICS
NPN EPITAXIAL SILICON TRANSISTOR
Ic -VCE
Ic -VCE
5
5
25mA
30mA
35mA
4
4
3
25mA
20mA
40mA
45mA
20mA
3
2
15mA
15mA
10mA
10mA
5mA
2
1
5mA
1
0
IB=0
1.6
IB=0
0
0
0.4
0.8
1.2
2.0
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
Ic -VBE
Collector to Emitter Voltage, VCE (V)
hFE -I c
1000
6
5
VCE=2V
VCE=2V
7
5
Ta=75℃
3
2
4
100
3
2
Ta=25℃
Ta=-25℃
Ta=75℃
Ta=25℃
7
5
3
2
1
0
Ta=-25℃
10
5 70.01
2
3
5 7
0.1
0
0.2
0.4
0.8
1.0
2
3
5 7
1.0
2 3 5 7
10
0.6
1.2
Base to Emitter Voltage, VBE (V)
fT -I c
Collector Current, IC (A)
Cob -VcB
5
1000
7
VCE=5V
f=1MHz
3
2
3
2
100
7
5
100
7
5
3
2
3
2
10
10
5
7
5 7
2
3
2 3
2
3
5
7
5
7
2
3
5
7
5 7
100
2
3
10
1.0
10
1.0
0.1
Colletcor Current, Ic (A)
Colletcor to Base Voltage, VCB (V)
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R213-007,B
2SD1803
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERICS(cont.)
VCE(sat) -Ic
VBE(sat) -Ic
5
10
7
Ic/IB=20
Ic/IB=20
3
2
5
1000
7
5
3
2
3
2
Ta=75℃
Ta=-25℃
100
7
Ta=-25℃
Ta=75℃
1.0
7
5
3
2
Ta=25℃
5
3
Ta=25℃
3 5 7
10
2
2 3 5
7
2
2
2 3 5 7
5 7
3 5 7
5
5 7
3
5 7
0.1
2 3
7
1.0
0.01
10
0.01
10
0.1
1.0
(A)
Collector Current, I
C
Collector Current, IC (A)
A S O
PD -Ta
2
24
20
16
12
Icp
10ms
10
7
5
3
2
1ms
Ic
D
C
O
100ms
per
1.0
7
a
ti
D
o
C O
n
Tc
p
5
=
er
2
3
at
i
5
℃
on
Ta
2
8
4
=
0.1
25
℃
7
5
3
2
No heat sink
20 40 60
Ambient Temperature, Ta (℃)
Tc=25℃
1
0
0.01
2
2
3
5 7
5 7
0
140 160
0.1
3
5 7
2
3
80 100 120
100
1.0
10
Colletcor to Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5
www.unisonic.com.tw
QW-R213-007,B
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