2SD2136_11 [UTC]

POWER TRANSISTOR; 功率晶体管


型号：	2SD2136_11
厂家：	Unisonic Technologies
描述：	POWER TRANSISTOR 功率晶体管晶体晶体管
文件：	总4页 (文件大小：165K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SD2136

NPN SILICON TRANSISTOR

POWER TRANSISTOR

DESCRIPTION

The UTC 2SD2136 is designed for power amplification.

FEATURES

* High forward current transfer ratio h_FEwhich has satisfactory

linearity.

* Low collector to emitter saturation voltage V_CE(SAT)

* Allowing supply with the radial taping.

ORDERING INFORMATION

Ordering Number

Lead Free

Pin Assignment

Packing

Package

Halogen Free

2SD2136L-x-T60-K

2SD2136L-x-T6C-K

2SD2136G-x-T60-K

2SD2136G-x-T6C-K

TO-126

Bulk

TO-126C

www.unisonic.com.tw

1 of 4

QW-R204-011.C

2SD2136

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

I_CP

1.5

P_C

°С

T_J

150

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified )

PARAMETER

SYMBOL

BV_CEO

I_CEO

TEST CONDITIONS

I_C=30mA, I_B=0

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

Collect Cutoff Current

V_CE=60V, I_B=0

V_CE=60 V, V_BE=0

V_BE=6 V, I_C=0

V_CE=4V ,I_C=1A

V_CE=4V ,I_C=3A

300

200

µA

Collect Cutoff Current

I_CES

Emitter Cutoff Current

I_EBO

h_FE1

250

DC Current Gain

h_FE2

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Current Gain Bandwidth Product

Turn On Time

V_CE(SAT)I_C=3A, I_B=0.375A

1.2

1.8

V_BE

f_T

V_CE=4V ,I_C=3A

V_CE=15V, I_E=0.1A, f =200MHz

220

0.5

2.5

0.4

MH_Z

µS

t_ON

t_S

I_C= 1A, I_B1=0.1A, I_B2=0.1A

Storage Time

Fall Time

t_F

CLASSIFICATION OF hFE1

RANK

RANGE

40-90

70-150

120-250

UNISONIC TECHNOLOGIES CO., LTD

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QW-R204-011.C

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2SD2136

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

I_C-V_CE

I_C- V_BE

T_C=25°С

V_CE=4V

T_C=25°С

90mA

I_B=100mA

70mA

80mA

60mA

50mA

40mA

30mA

T_C=-25°С

T_C=100°С

20mA

10mA

0.4

0.8

1.2

1.6 2.0 2.4

Collector Emitter Voltage, V_CE(V)

Base Emitter Voltage, V_BE(V)

P_C- T_A

V_CE(SAT)- I_C

2.0

100

Without Head Sink

1.6

1.2

T_C=100°С

0.8

0.4

T_C=25°С

0.3

0.1

T_C=-25°С

0.03

0.01

20 40 60 80 100 120 140 160

0.01 0.03

0.1 0.3

Ambient Temperature, T_A(°С)

Collector Current, I_C(A)

h_FE- I_C

f_T- I_C

10K

300

250

200

150

100

V_CE=4V

V_CB=10V

T_C=25°С

f=200MH_Z

T_C=100°С

T_C=25°С

0.3K

0.1K

T_C=-25°С

0.01 0.03

0.1 0.3

-0.01 -0.03

-0.1 -0.3

-1

-3

-10

Collector Current, I_C(A)

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R204-011.C

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2SD2136

NPN SILICON TRANSISTOR

TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

4 of 4

QW-R204-011.C

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