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2SD667G-B-T9N-B [UTC]

Small Signal Bipolar Transistor,;
2SD667G-B-T9N-B
型号： 2SD667G-B-T9N-B
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Small Signal Bipolar Transistor,

放大器 晶体管
文件： 总4页 (文件大小：160K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
2SD667  
NPN SILICON TRANSISTOR  
SILICON NPN EPITAXIAL  
DESCRIPTION  
The UTC 2SD667 is a NPN epitaxial silicon transistor, which can  
be used as a low frequency power amplifier.  
FEATURES  
* Low frequency power amplifier  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
E
E
2
C
C
3
B
B
2SD667L-x-T9N-B  
2SD667L-x-T9N-K  
2SD667G-x-T9N-B  
2SD667G-x-T9N-K  
TO-92NL  
TO-92NL  
Tape Box  
Bulk  
www.unisonic.com.tw  
1 of 4  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R211-019.E  
2SD667  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
120  
80  
V
6
V
1.0  
A
Collector Peak Current (Note2)  
Collector Power Dissipation  
Junction Temperature  
ICP  
2.0  
A
PC  
0.9  
W
°C  
°C  
TJ  
+150  
-55 ~ +150  
Storage Temperature  
TSTG  
Notes: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. PW≤10ms, Duty cycle≤20%  
ELECTRICAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
IC=10μA, IE=0  
MIN TYP MAX UNIT  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cutoff Current  
120  
80  
6
V
V
IC=1mA, RBE=∞  
IE=10μA, IC=0  
V
VCB=120V, IE=0  
VEB=6V, IC=0  
500  
500  
320  
nA  
nA  
Emitter Cutoff Current  
IEBO  
hFE1  
VCE=5V, IC=150mA  
VCE=5V, IC=500mA  
60  
40  
DC Current Transfer Ratio  
hFE2  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Gain Bandwidth Product  
VCE(SAT) IC=500mA, IB=50mA  
VBE(SAT) IC=500mA, IB=50mA  
0.5  
1.1  
V
V
fT  
VCE= -5V, IC= -150mA  
140  
20  
MHz  
pF  
Collector Output Capacitance  
Cob  
VCB= -10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE1  
RANK  
B
C
D
RANGE  
60-120  
100-200  
160-320  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R211-019.E  
www.unisonic.com.tw  
2SD667  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Collector Current vs. Collector-Emitter Voltage  
Collector Current vs. Collector-Base Voltage  
1.2  
12  
1.0  
0.8  
0.6  
0.4  
10  
8
6
4
0.2  
0
2
0
0
50  
100  
150  
200  
250  
0
20  
40  
60  
80 100 120  
Collector-Emitter Voltage, VCE (V)  
Collector-Base Voltage, VCB (V)  
Collector Current vs. Collector-  
Emitter Voltage  
Emitter Current vs. Emitter-Base Voltage  
180  
160  
140  
120  
100  
80  
120  
100  
80  
IB=1090μA  
IB=890μA  
IB=690μA  
60  
IB=490μA  
60  
40  
40  
20  
IB=290μA  
IB=90μA  
20  
0
0
0
2
4
6
8
10  
12  
0
1
2
3
4
5
6
7
Emitter-Base Voltage, VEB (V)  
Collector-Emitter Voltage, VCE (V)  
Collector Current vs. Collector-  
Emitter Voltage  
Collector Current vs. Collector-  
Emitter Voltage  
12  
10  
120  
100  
IB=707μA  
IB=69.6μA  
IB=59.6μA  
IB=49.6μA  
IB=39.6μA  
IB=607μA  
IB=507μA  
8
6
4
2
0
80  
60  
40  
20  
0
IB=407μA  
IB=307μA  
IB=207μA  
IB=29.6μA  
IB=19.6μA  
IB=9.6μA  
IB=107μA  
IB=7μA  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
Collector-Emitter Voltage, VCE (V)  
Collector-Emitter Voltage, VCE (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R211-019.E  
www.unisonic.com.tw  
2SD667  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Collector Current vs. Collector-  
Emitter Voltage  
1200  
1000  
IB=13.25mA  
IB=8.25mA  
800  
600  
400  
200  
0
IB=3.25mA  
0
2
4
6
8
10  
Collector-Emitter Voltage, VCE (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R211-019.E  
www.unisonic.com.tw  

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