2SD669-B-T60-A-K [UTC]

Transistor;


型号：	2SD669-B-T60-A-K
厂家：	Unisonic Technologies
描述：	Transistor
文件：	总4页 (文件大小：72K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SD669/A

NPN EPITAXIAL SILICON TRANSISTOR

BIPOLAR POWER GENERAL

PURPOSE TRANSISTOR

TO-126

TO-251

*Pb-free plating product number: 2SD669/AL

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Package

Packing

Normal

Lead Free Plating

2SD669-x-T60-A-K

2SD669A-x-T60-A-K

2SD669-x-TM3-A-T

2SD669A-x-TM3-A-T

2SD669L-x-T60-A-K

2SD669AL-x-T60-A-K

2SD669L-x-TM3-A-T

2SD669AL-x-TM3-A-T

TO-126

TO-251

Bulk

Tube

Note: x: Rank, refer to Classification of h_FE1

2SD669L-x-T60-A-K

(1)Packing Type

(1) K: Bulk, T: Tube

(2)Pin Assignment

(3)Package Type

(4)Rank

(2) refer to Pin Assignment

(3) T60: TO-126, TM3: TO-251

(4) x: refer to Classification of h

FE1

(5)Lead Plating

(5) L: Lead Free Plating, Blank: Pb/Sn

www.unisonic.com.tw

1 of 4

QW-R204-005,D

2SD669/A

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

RATINGS

UNIT

Collector-base voltage

180

120

160

2SD669

Collector-emitter voltage

V_CEO

2SD669A

Emitter-base voltage

Collector current

V_EBO

I_C

1.5

Collector peak current

l_C(PEAK)

P_D

Collector power dissipation

Collector power dissipation (T_C=25℃)

Junction Temperature

℃

P_D

T_J

+150

Storage Temperature

T_STG

-40 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector to bse breakdown voltage

SYMBOL

TEST CONDITIONS

MIN

180

120

160

TYP MAX UNIT

V_(BR)CBOI_C=1mA, I_E=0

V_(BR)CEOI_C=10mA, R_BE=∞

V_(BR)EBOI_E=1mA, I_C=0

Collector to emitter breakdown 2SD669

voltage

2SD669A

Emitter to base breakdown voltage

Collector cut-off current

I_CBO

h_FE1

h_FE2

V_CB=160V, I_E=0

µA

V_CE=5V, I_C=150mA (note)

V_CE=5V, I_C=500mA (note)

320

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(SAT)I_C=600mA, I_B=50mA (note)

V_BE

f_T

V_CE=5V, I_C=150mA (note)

V_CB=10V, I_E=0, f=1MHz

1.5

Current gain bandwidth product

Output capacitance

140

MHz

C_ob

Note: Pulse test.

CLASSIFICATION OF h_FE1

ꢀ

RANK

RANGE

60-120

100-200

160-320

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

QW-R204-005,D

www.unisonic.com.tw

2SD669/A

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

Maximum Collector Dissipation

Curve

Area of Safe Operation

(13.3V, 1.5A)

1.0

40V, 0.5A

2SD669A

0.3

0.1

DC Operation (T_C=25℃)

(120V, 0.04A)

0.03

0.01

(160V, 0.02A)

2SD669

100

150

100 300

Case temperature, T_C(℃)

Collector to Emitter Voltage, V_CE(V)

Typical Output Characteristecs

Typical Transfer Characteristics

V_CE=5V

1.0

0.8

0.6

0.4

500

T_C=25℃

200

100

2.0

1.5

℃

1.0

0.2

0.5mA

I_B=0

0.2

0.4

0.6

0.8

1.0

Base to Emitter Voltage, V_BE(V)

Collector to Emitter Voltage, V_CE(V)

DC Current Transfer Ratio

vs. Collector Current

Collector to Emitter Saturation Voltage

vs. Collector Current

300

250

1.2

1.0

℃

I_C=10 I_B

200

150

100

0.8

0.6

0.4

0.2

℃

V_CE=5V

T^C

10 30 100 300 1,0003,000

CollectorCurrent, I_C(mA)

100 300 1,000

CollectorCurrent, I_C(mA)

UNISONIC TECHNOLOGIES CO., LTD

3 of 4

QW-R204-005,D

www.unisonic.com.tw

2SD669/A

NPN EPITAXIAL SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS(Cont.)

Base to Emitter Saturation Voltage

vs. Collector Current

Gain Bandwidth Product

vs. Collector Current

1.2

240

V_CE=5V

Ta=25℃

I_C=10I_B

200

1.0

0.8

0.6

160

120

0.4

0.2

10 30

100 300 1,000

100

300

1,000

CollectorCurrent, I_C(mA)

Collector Current, I_C(mA)

Collector Output Capacitance

vs. Collector to Base Voltage

200

100

f=1MHz

I_E=0

10 20

50 100

Collector to Base Voltage, V_CB(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

4 of 4

QW-R204-005,D

www.unisonic.com.tw

相关型号：