2SD669-B-TM3-T [UTC]
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR; 双极型功率通用晶体管
| 型号： | 2SD669-B-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-126C Plastic-Encapsulated Transistors
2SD669 TRANSISTOR (NPN)
TO-126C
FEATURES
Power dissipation
PCM:
1
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
Collector current
ICM:
1.5
A
V
1 2 3
Collector-base voltage
V(BR)CBO 180
:
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=1mA, IE=0
MIN
180
120
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
Ic=10mA, IB=0
IE=1mA, IC=0
V
µA
µA
VCB=160V, IE=0
VEB=4V, IC=0
10
10
IEBO
Emitter cut-off current
hFE(1)
hFE(2)
VCE(sat)
VBE
V
CE=5V, IC=150mA
60
30
320
DC current gain
VCE=5V, IC=500mA
IC=500mA, IB=50mA
V
V
Collector-emitter saturation voltage
Base-emitter voltage
1
VCE=5V, IC=150mA
1.5
MHz
pF
Transition frequency
fT
VCE=5V, IC=150mA
140
14
Cob
Collector output capacitance
V
CB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
Rank
B
C
D
160-320
Range
60-120
100-200
Typical Characteristics
2SD669
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