2SD669AL-C-T60-A-K [UTC]
Transistor;型号: | 2SD669AL-C-T60-A-K |
厂家: | Unisonic Technologies |
描述: | Transistor |
文件: | 总4页 (文件大小:72K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
TO-126
1
TO-251
*Pb-free plating product number: 2SD669/AL
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
E
E
E
E
2
C
C
C
C
3
B
B
B
B
2SD669-x-T60-A-K
2SD669A-x-T60-A-K
2SD669-x-TM3-A-T
2SD669A-x-TM3-A-T
2SD669L-x-T60-A-K
2SD669AL-x-T60-A-K
2SD669L-x-TM3-A-T
2SD669AL-x-TM3-A-T
TO-126
TO-126
TO-251
TO-251
Bulk
Bulk
Tube
Tube
Note: x: Rank, refer to Classification of hFE1
2SD669L-x-T60-A-K
(1)Packing Type
(1) K: Bulk, T: Tube
(2)Pin Assignment
(3)Package Type
(4)Rank
(2) refer to Pin Assignment
(3) T60: TO-126, TM3: TO-251
(4) x: refer to Classification of h
FE1
(5)Lead Plating
(5) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R204-005,D
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-base voltage
180
120
160
5
2SD669
Collector-emitter voltage
VCEO
V
2SD669A
Emitter-base voltage
Collector current
VEBO
IC
V
A
1.5
3
Collector peak current
lC(PEAK)
PD
A
Collector power dissipation
Collector power dissipation (TC=25℃)
Junction Temperature
1
W
W
℃
℃
PD
20
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector to bse breakdown voltage
SYMBOL
TEST CONDITIONS
MIN
180
120
160
5
TYP MAX UNIT
V
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=10mA, RBE=∞
V(BR)EBO IE=1mA, IC=0
Collector to emitter breakdown 2SD669
V
voltage
2SD669A
Emitter to base breakdown voltage
Collector cut-off current
V
ICBO
hFE1
hFE2
VCB=160V, IE=0
10
µA
VCE=5V, IC=150mA (note)
VCE=5V, IC=500mA (note)
60
30
320
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
VCE(SAT) IC=600mA, IB=50mA (note)
1
V
V
VBE
fT
VCE=5V, IC=150mA (note)
VCE=5V, IC=150mA (note)
VCB=10V, IE=0, f=1MHz
1.5
Current gain bandwidth product
Output capacitance
140
14
MHz
pF
Cob
Note: Pulse test.
CLASSIFICATION OF hFE1
ꢀ
RANK
B
C
D
RANGE
60-120
100-200
160-320
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-005,D
www.unisonic.com.tw
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Maximum Collector Dissipation
Curve
Area of Safe Operation
30
20
10
3
(13.3V, 1.5A)
1.0
40V, 0.5A
2SD669A
0.3
0.1
DC Operation (TC=25℃)
(120V, 0.04A)
0.03
0.01
(160V, 0.02A)
2SD669
0
50
100
150
1
3
10
30
100 300
Case temperature, TC (℃)
Collector to Emitter Voltage, VCE (V)
Typical Output Characteristecs
Typical Transfer Characteristics
VCE=5V
1.0
0.8
0.6
0.4
500
.5
0
.
5
4
5
0
.
TC=25℃
200
100
50
5
5
.
3
.
0
.
4
3
P
D
5
.
=
2
2
0W
2.0
1.5
℃
5
7
20
10
5
=
0
a
5
2
T
-
2
1.0
0.2
0.5mA
IB=0
2
1
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage, VBE (V)
Collector to Emitter Voltage, VCE (V)
DC Current Transfer Ratio
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
300
250
1.2
1.0
℃
IC=10 IB
5
7
=
a
T
5
2
200
150
100
50
0.8
0.6
0
2
-
0.4
0.2
0
℃
5
5
2
7
=
VCE=5V
TC
0
2
-
1
1
3
10 30 100 300 1,0003,000
CollectorCurrent, IC (mA)
1
3
10
30
100 300 1,000
CollectorCurrent, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-005,D
www.unisonic.com.tw
2SD669/A
NPN EPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Base to Emitter Saturation Voltage
vs. Collector Current
Gain Bandwidth Product
vs. Collector Current
1.2
240
VCE=5V
Ta=25℃
IC=10IB
200
1.0
0.8
0.6
C
160
120
80
0.4
0.2
0
40
0
1
3
10 30
100 300 1,000
10
30
100
300
1,000
CollectorCurrent, IC (mA)
Collector Current, IC (mA)
Collector Output Capacitance
vs. Collector to Base Voltage
200
100
50
f=1MHz
IE=0
20
10
5
2
1
2
5
10 20
50 100
Collector to Base Voltage, VCB (V)
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-005,D
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