2SD879(SOT-89) [UTC]
Transistor;
| 型号： | 2SD879(SOT-89) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SD879
NPNEPITAXIAL SILICON TRANSISTOR
1.5V, 3V STROBE APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor,
designed for 1.5V and 3V strobe applications.
1
FEATURES
*In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
*The charge time is approximately 1 second faster than
that of germanium transistors.
*Less power dissipation because of lwo
Collector-to-Emitter Voltage VCE(sat), permitting more
flashes of light to be emitted.
SOT-89
*Large current capacity and highly resistant to break-down.
*Excellent linearity of hFE in the region from low current to
high current.
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEX
VCEO
VEBO
PD
VALUE
UNIT
V
V
V
V
W
A
A
°C
°C
30
20
10
6
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
1
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
Ic
Icp
Tj
TSTG
3
5
150
-55 ~ +150
Note: PULSE CONDITION -> 100 ms single pulse
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEX
VCEO
VEBO
VBE
TEST CONDITIONS
IC=10uA, IE=0
MIN TYP MAX UNIT
30
20
10
6
V
V
V
V
V
µA
µA
IC=1mA, VBE=3V
IC=1mA, RBE=∞
IE=10uA, IC=0
VCE=-1V,IC=-2A
VCB=20V,IE=0
Base-Emitter Voltage
0.83
1.5
1
1
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
VCE(sat)
fT
VEB=4V,Ic=0
VCE=2V, Ic=3A (pulse)
Ic=3A,IB=60mA (pulse)
VCE=10V, Ic=50mA
VCB=10V,f=1MHz
140
210
0.3
200
30
400
0.4
V
MHz
pF
Cob
Pulse: 1mS
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R208-010,A
UTC2SD879
NPNEPITAXIAL SILICON TRANSISTOR
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R208-010,A
UTC2SD879
NPNEPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R208-010,A
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