2SD879_11 [UTC]
1.5V, 3V STROBE APPLICATIONS; 1.5V , 3V频闪应用型号: | 2SD879_11 |
厂家: | Unisonic Technologies |
描述: | 1.5V, 3V STROBE APPLICATIONS |
文件: | 总2页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD879
NPNEPITAXIAL SILICON TRANSISTOR
1.5V, 3V STROBE
APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for
1.5V and 3V strobe applications.
FEATURES
* In applications where two NiCd batteries are used to provide 2.4V,
two 2SD879s are used.
* The charge time is approximately 1 second faster than that of
germanium transistors.
* Less power dissipation because of lWO Collector-to-Emitter Voltage
VCE(SAT), permitting more flashes of light to be emitted.
* Large current capacity and highly resistant to break-down.
* Excellent linearity of hFE in the region from low current to high
current.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
E
E
E
2
C
C
C
C
3
E
B
B
B
2SD879L-AB3-R
2SD879L-T92-B
2SD879L-T92-K
2SD879L-T92-R
2SD879G-AB3-R
2SD879G-T92-B
2SD879G-T92-K
2SD879G-T92-R
SOT-89
TO-92
TO-92
TO-92
Tape Reel
Tape Box
Bulk
Tape Reel
Note: Pin Assignment: E: Emitter C: Collector B: Base
www.unisonic.com.tw
1 of 2
Copyright © 2011 Unisonic Technologies Co., LTD
QW-R208-010.Ba
2SD879
NPNEPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25℃ ,unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEX
VCEO
VEBO
PD
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
30
20
V
10
V
6
V
1
W
A
Collector Current (DC)
Collector Current (PULSE)
Junction Temperature
Storage Temperature
IC
3
5
ICP
A
TJ
150
℃
℃
TSTG
-55 ~ +150
Note 1. Pulse Condition -> 100 ms single pulse
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEX
VCEO
VEBO
VBE
TEST CONDITIONS
IC=10uA, IE=0
MIN
30
20
10
6
TYP
0.83
MAX
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base-Emitter Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
IC=1mA, VBE=3V
IC=1mA, RBE=∞
IE=10uA, IC=0
V
V
V
VCE=-1V,IC=-2A
VCB=20V, IE=0
1.5
1
V
ICBO
μA
μA
IEBO
VEB=4V, IC=0
1
hFE
VCE=2V, IC=3A (pulse)
140
210
0.3
200
30
400
0.4
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=3A, IB=60mA (pulse)
V
fT
VCE=10V, IC=50mA
VCB=10V, f=1MHz
MHz
pF
COB
Pulse: 1mS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R208-010.Ba
www.unisonic.com.tw
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