2SD880G-TA3-T [UTC]

NPN EPITAXIAL TRANSISTOR; NPN外延型晶体管
2SD880G-TA3-T
型号: 2SD880G-TA3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN EPITAXIAL TRANSISTOR
NPN外延型晶体管

晶体 晶体管 功率双极晶体管 放大器 局域网
文件: 总4页 (文件大小:149K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SD880  
NPN SILICON TRANSISTOR  
NPN EPITAXIAL TRANSISTOR  
„
DESCRIPTION  
The UTC 2SD880 is designed for audio frequency power  
amplifier applications.  
„
FEATURES  
* High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A)  
* Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)  
* High Power Dissipation: PC=30W (TA=25°C)  
* Complementary to 2SB834  
„ ORDERING INFORMATION  
Ordering Number  
Package  
Pin Assignment  
Packing  
Tube  
Lead Free  
Halogen Free  
1
2
3
2SD880L-TA3-T  
2SD880G-TA3-T  
TO-220  
B
C
E
www.unisonic.com.tw  
1 of 4  
Copyright © 2011 Unisonic Technologies Co., Ltd  
QW-R203-013.D  
2SD880  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
60  
60  
V
7
3
V
A
Base Current  
IB  
0.5  
A
Power Dissipation  
PD  
30  
W
°C  
°C  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55~+150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TA =25°C)  
PARAMETER SYMBOL TEST CONDITIONS  
BVCEO IC=50mA, IE=0  
MIN TYP MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector Cut-Off Current  
60  
V
µA  
µA  
V
ICBO  
IEBO  
VCB=60V, IE=0  
VEB=7V, IC=0  
100  
100  
1
Emitter Cut-Off Current  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
DC Current Gain  
VCE(SAT) IC=3A, IB=300mA  
VBE(ON) VCE=5V, IC=500mA  
1
V
hFE  
fT  
IC=500mA, VCE=5V  
VCE=5V, IC=500mA  
100  
200  
Current gain bandwidth product  
3
MHZ  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R203-013.D  
www.unisonic.com.tw  
2SD880  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R203-013.D  
www.unisonic.com.tw  
2SD880  
NPN SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R203-013.D  
www.unisonic.com.tw  

相关型号:

2SD880GR

TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power
TOSHIBA

2SD880GR

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CDIL

2SD880GR

Transistor
TRSYS
JCST

2SD880GRL

暂无描述
TRSYS

2SD880GRP

TRANSISTOR 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, TO-220, 3 PIN, BIP General Purpose Power
MCC

2SD880L-TA3-T

NPN EPITAXIAL TRANSISTOR
UTC

2SD880O

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB
MOSPEC

2SD880O

Transistor
UTC
JCST

2SD880OL

Transistor
UTC

2SD880P

暂无描述
MCC