2SD965AL-R-AB3-K [UTC]

LOW VOLTAGE HIGH CURRENT TRANSISTOR; 低压大电流晶体管
2SD965AL-R-AB3-K
型号: 2SD965AL-R-AB3-K
厂家: Unisonic Technologies    Unisonic Technologies
描述:

LOW VOLTAGE HIGH CURRENT TRANSISTOR
低压大电流晶体管

晶体 晶体管
文件: 总4页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SD965/A  
NPN SILICON TRANSISTOR  
LOW VOLTAGE HIGH  
1
CURRENT TRANSISTOR  
SOT-89  
FEATURES  
* Collector current up to 5A  
* UTC 2SD965: Collector-Emitter voltage up to 20 V  
* UTC 2SD965A: Collector-Emitter voltage up to 30 V  
1
TO-252  
APPLICATIONS  
* Audio amplifier  
* Flash unit of camera  
* Switching circuit  
1
TO-92  
*Pb-free plating product number:  
2SD965L/2SD965AL  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
B
E
E
B
B
B
E
E
B
B
2
3
E
B
B
E
E
E
B
B
E
E
2SD965-x-AB3-R  
2SD965-x-T92-B  
2SD965-x-T92-K  
2SD965-x-TN3-R  
2SD965-x-TN3-T  
2SD965A-x-AB3-R  
2SD965A-x-T92-B  
2SD965A-x-T92-K  
2SD965A-x-TN3-R  
2SD965A-x-TN3-T  
2SD965L-x-AB3-R  
2SD965L-x-T92-B  
2SD965L-x-T92-K  
2SD965L-x-TN3-R  
2SD965L-x-TN3-T  
2SD965AL-x-AB3-R  
2SD965AL-x-T92-B  
2SD965AL-x-T92-K  
2SD965AL-x-TN3-R  
2SD965AL-x-TN3-T  
SOT-89  
TO-92  
C
C
C
C
C
C
C
C
C
C
Tape Reel  
Tape Box  
Bulk  
TO-92  
TO-252  
TO-252  
SOT-89  
TO-92  
Tape Reel  
Tube  
Tape Reel  
Tape Box  
Bulk  
TO-92  
TO-252  
TO-252  
Tape Reel  
Tube  
2SD965L-x-AB3-R  
(1)Packing Type  
(2)Package Type  
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube  
(2) AB3: SOT-89, T92: TO-92, TN3: TO-252  
(3)Rank  
(3) x: refer to Classification of h  
FE2  
(4) L: Lead Free Plating, Blank: Pb/Sn  
(4)Lead Plating  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R209-007,B  
2SD965/A  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (Ta=25  
)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
UNIT  
V
Collector-Base Voltage  
40  
20  
30  
7
2SD965  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
2SD965A  
V
V
SOT-89  
TO-92  
500  
mW  
Collector Dissipation  
PC  
750  
1
mW  
W
TO-252  
Collector Current  
IC  
TJ  
5
A
Junction Temperature  
Storage Temperature  
150  
TSTG  
-65 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN  
40  
20  
30  
7
TYP  
MAX  
UNIT  
V
Collector-Base Breakdown Voltage BVCBO IC=100 A, IE=0  
µ
Collector-Emitter  
Breakdown Voltage  
2SD965  
2SD965A  
V
BVCEO IC=1mA, IB=0  
V
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
BVEBO IE=10 A, IC=0  
µ
V
ICBO  
IEBO  
VCB=10V, IE=0  
VEB=7V, IC=0  
100  
100  
nA  
nA  
VCE=2V, IC=1mA  
VCE=2V, IC=0.5A  
VCE=2V, IC=2A  
200  
150  
DC Current Gain(note)  
hFE  
230  
150  
800  
1
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(SAT) IC=3A, IB= 0.1A  
V
fT  
VCE=6V, IC=50mA  
MHz  
pF  
Cob  
VCB=20V, IE=0, f=1MHz  
50  
CLASSIFICATION OF hFE2  
RANK  
Q
R
S
RANGE  
230-380  
340-600  
560-800  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R209-007,B  
www.unisonic.com.tw  
2SD965/A  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristics  
IB=3.0mA  
DC Current Gain  
103  
102  
101  
100  
3.0  
2.5  
IB=2.5mA  
IB=2.0mA  
2.0  
1.5  
IB=1.5mA  
VCE=2V  
IB=1.0mA  
IB=0.5mA  
1.0  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
10-1  
101  
102  
103  
104  
Collector-Emitter Voltage ( V)  
Collector Current, IC (mA)  
Base-Emitter on Voltage  
Saturation Voltage  
IC=30·IB  
104  
6
25℃  
VCE=2V  
5
-25℃  
Ta=75℃  
VBE(SAT)  
103  
102  
101  
4
3
VCE(SAT)  
2
1
0
100  
101  
102  
103  
104  
0
0.4  
0.8  
1.2  
1.6  
2.0  
Base to Emitter Voltage, VBE (V)  
Collector Current, IC (mA)  
Current Gain-BandwidthProduct  
Collector Output Capacitance  
103  
102  
101  
100  
103  
102  
101  
100  
f=1MHz  
IE=0  
VCE=6V  
100  
101  
102  
103  
10-1  
100  
101  
102  
Collector Current, IC (mA)  
Collector-Base Voltage (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R209-007,B  
www.unisonic.com.tw  
2SD965/A  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Safe Operation Area  
100  
10  
Single pulse  
Ta=25℃  
Icp  
IC  
t=10ms  
t=1s  
1
0.1  
0.01  
0.1  
1
10  
100  
Collector-Emitter Voltage, VCE (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R209-007,B  
www.unisonic.com.tw  

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