2SK303L-V5-T92-K [UTC]

Small Signal Field-Effect Transistor, N-Channel, Junction FET,;


型号：	2SK303L-V5-T92-K
厂家：	Unisonic Technologies
描述：	Small Signal Field-Effect Transistor, N-Channel, Junction FET,
文件：	总3页 (文件大小：138K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SK303

JFET

LOW-FREQUENCY

GENERAL-PURPOSE

AMPLIFIER APPLICATIONS

FEATURES

* Ideal For Potentiometers

* Analog Switches

* Low Frequency Amplifiers

* Constant Current Supplies

* Impedance Conversion

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

2SK303L-x-AE3-R

2SK303L-x-A3C-R

2SK303L-x-AQ3-R

2SK303L-x-T92-B

2SK303L-x-T92-K

2SK303L-x-T92-R

2SK303G-x-AE3-R

2SK303G-x-A3C-R

2SK303G-x-AQ3-R

2SK303G-x-T92-B

2SK303G-x-T92-K

2SK303G-x-T92-R

SOT-23

SOT-113S

SOT-723

TO-92

Tape Reel

Tape Box

Bulk

TO-92

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

MARKING

2SK303-V2

2SK303-V3

2SK303-V4

2SK303-V5

L: Lead Free

G: Halogen Free

L: Lead Free

G: Halogen Free

L: Lead Free

G: Halogen Free

L: Lead Free

G: Halogen Free

www.unisonic.com.tw

1 of 3

QW-R206-071,E

2SK303

JFET

ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_G

RATINGS

UNIT

Drain to Source Voltage

Gate to Source Voltage

Gate Current

-30

Drain Current

I_D

SOT-23

200

Power Dissipation

SOT-113S/SOT-723

TO-92

P_D

100

625

Junction Temperature

Storage Temperature

T_J

150

°C

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Gate to Drain Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS

Gate Cutoff Voltage

BV_GDS

I_DSS

I_G=-10µA

-30

0.6

V_DS=10V,V_GS=0V

V_GS=-20V

12.0 mA

I_GSS

-1.0

V_GS(OFF)V_DS=10V, I_D=1µA

-1

-4

Ω

Drain-Source On-State Resistance

Forward Transfer Admittance

DYNAMIC PARAMETERS

Input Capacitance

R_DS(ON)

|Y_FS|

V_DS=10mV, V_GS=0V

250

6.0

V_DS=10V, V_GS=0V, f =1MHz

2.5

C_ISS

V_DS=10V,V_GS=0V,f =1MHz

Reverse Transfer Capacitance

C_RSS

1.5

CLASSIFICATION OF I_DSS

RANK

0.6 ~ 1.5

1.2 ~ 3.0

2.5 ~ 6.0

I_DSS(mA)

5.0 ~ 12.0

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R206-071,E

www.unisonic.com.tw

2SK303

JFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

3 of 3

QW-R206-071,E

www.unisonic.com.tw

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