2SK508G-K51-AE3-R [UTC]

Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236,;
2SK508G-K51-AE3-R
型号: 2SK508G-K51-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236,

放大器 光电二极管 晶体管
文件: 总2页 (文件大小:139K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SK508  
Preliminary  
N-CHANNEL JFET  
HIGH FREQUENCY AMPLIFIER  
N-CHANNEL SILICON  
JUNCTION FIELD EFFECT  
TRANSISTOR  
3
1
2
„
DESCRIPTION  
SOT-23  
(EIAJ TO-236)  
The UTC 2SK508 is NPN transistor with High forward transfer  
admittance and low input capacitance.  
It is suitable for cordless telephone, AM tuner and wireless  
installation, etc.  
„
FEATURES  
* High forward transfer admittance  
* Low input capacitance  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-23  
Packing  
Lead Free  
Halogen Free  
2SK508G-x-AE3-R  
1
2
3
2SK508L-x-AE3-R  
D
S
G
Tape Reel  
Note: Pin Assignment: D: Drain S: Source G: Gate  
„
MARKING  
www.unisonic.com.tw  
1 of 2  
Copyright © 2012 Unisonic Technologies Co., Ltd  
QW-R206-101.a  
2SK508  
Preliminary  
N-CHANNEL JFET  
„
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VGDO  
VGSO  
VDSX  
ID  
RATINGS  
UNIT  
V
Gate to Drain Voltage  
Gate to Source Voltage  
Drain to Source Voltage (VGS=-4.0 V)  
Drain Current (DC)  
-15  
-15  
V
15  
V
50  
mA  
mA  
mW  
°C  
Gate Current (DC)  
IG  
5
Power Dissipation  
PD  
200  
Junction Temperature  
Storage Temperature  
TJ  
150  
TSTG  
-55~+150  
°C  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
IGSS  
TEST CONDITIONS  
GS=-10V, VDS=0V  
MIN TYP MAX UNIT  
V
-1.0  
50  
Gate Cut-Off Current  
nA  
mA  
V
Zero Gate Voltage Drain Current (Note 1)  
Gate to Source Cut-Off Voltage  
IDSS  
VDS=5.0V, VGS=0V  
10  
20  
VDS=5.0V, ID=10μA  
-0.6 -1.4 -3.5  
VGS(off)  
|yFS|1 VDS=5.0V, ID=10mA, f=1.0kHz  
|yFS|2 VDS=5.0V, VGS=0V, f=1.0kHz  
14  
14  
19  
26  
mS  
mS  
pF  
pF  
Forward Transfer Admittance (Note 1)  
CISS  
VDS=5.0V, ID=10mA, f=1.0MHz  
VDS=5.0V, ID=10mA, f=1.0MHz  
4.8  
1.6  
Input Capacitance  
Feedback Capacitance  
CRSS  
Note: 1. Pulsed: PW1ms, Duty Cycle1%  
„
IDSS CLASSIFICATION  
MARKING  
IDSS (mA)  
K51  
10 ~ 20  
K52  
K53  
25 ~ 50  
15 ~ 30  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 2  
QW-R206-101.a  
www.unisonic.com.tw  

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