30N06G-TF3-T [UTC]
60V, 30A N-CHANNEL POWER MOSFET; 60V ， 30A的N沟道功率MOSFET
| 型号： | 30N06G-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60V, 30A N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
30N06
Power MOSFET
60V, 30A N-CHANNEL
POWER MOSFET
1
TO-252
TO-220
DESCRIPTION
The UTC 30N06 is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
1
FEATURES
* RDS(ON) = 40mΩ@VGS = 10 V
1
TO-220F
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
1
TO-220F2
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
3
S
S
S
S
30N06L-TA3-T
30N06L-TF2-T
30N06L-TF3-T
30N06L-TN3-T
30N06G-TA3-T
30N06G-TF2-T
30N06G-TF3-T
30N06G-TN3-T
TO-220
TO-220F2
TO-220F
TO-252
G
G
G
G
Tube
Tube
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-087.E
30N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate to Source Voltage
60
±20
VGSS
V
TC = 25℃
30
A
Continuous Drain Current
ID
TC = 100℃
21.3
120
A
Pulsed Drain Current (Note 2)
IDM
EAS
EAR
A
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220
300
mJ
mJ
Avalanche Energy
8
79
Power Dissipation
TO-220F/ TO-220F2
TO-252
PD
45
W
44
Junction Temperature
Operation Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
℃
℃
℃
TOPR
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25℃
3.
THERMAL DATA
PARAMETER
SYMBOL
RATING
62
UNIT
°C/W
TO-220
Junction to Ambient
Junction to Case
TO-220F/TO-220F2
TO-252
θJA
62.5
110
TO-220
1.9
TO-220F/TO-220F2
TO-252
θJC
2.7
°C/W
2.85
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30N06
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
60
V
10
μA
Forward
Reverse
100 nA
-100 nA
V/℃
Gate-Source Leakage Current
IGSS
VGS = -20V, VDS = 0 V
ID =250μA, Referenced to 25℃
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.06
32
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
40
V
VGS = 10 V, ID = 15 A
mΩ
CISS
COSS
CRSS
800
300
80
pF
pF
pF
VGS = 0 V, VDS = 25 V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
12
79
50
52
20
6
ns
ns
Turn-On Rise Time
VDD = 30V, ID =15 A, VGS=10V
(Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
30
nC
nC
nC
VDS = 60V, VGS = 10 V,
ID = 24A (Note 1, 2)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
9
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 30A
1.4
30
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
120
A
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
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30N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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30N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
1mA
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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30N06
Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-State Characteristics
VGS
Top: 15V
10V
8V
7V
6V
5.5V
102
101
102
101
5V
Bottorm: 4.5V
4.5V
Note:
1. VDS=25V
2. 20µs Pulse Test
100
100
101
Drain-Source Voltage, VDS (V)
10-1
100
2
3
4
5
6
7
8
9 10
Gate-Source Voltage, VGS (V)
Reverse Drain Current vs. Allowable Case
Temperature
On-Resistance Variation vs. Drain Current and
Gate Voltage
100
102
80
60
150℃
VGS=10V
101
25℃
40
VGS=20V
*Note:
20
1. VGS=0V
2. 250µs Test
0.0
100
0
60
80 100 120
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
20
40
Source-Drain Voltage, VSD (V)
Drain Current, ID (A)
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30N06
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Maximum Drain Current vs. Case Temperature
30
Maximum Safe Operating
Operation in This
100
10
Area by RDS (ON)
100µs
1ms
20
10
0
10ms
DC
1
Note:
1. TC=25℃
2. TJ=150℃
3. Single Pulse
0.1
150
25
50
75
100
125
1
10
100
1000
Drain-Source Voltage, VDS (V)
Case Temperature, TC (℃)
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.1
0.05
0.02
Note:
0.01
1. ZθJC (t) = 0.88℃/W Max.
0.01
2. Duty Factor, D=t1/t2
3. TJ -TC=PDM×ZθJC (t)
Single pulse
1
10
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration, t1 (sec)
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30N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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