3N40KL-TMS-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 3N40KL-TMS-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N40K-MK
Preliminary
Power MOSFET
3A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N40K-MK is an N-channel mode power
MOSFET using UTC’s advanced technology to provide
customers with planar stripe and DMOS technology. This
technology specializes in allowing
a minimum on-state
resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and
commutation mode.
The UTC 3N40K-MK is universally applied in electronic
lamp ballast based on half bridge topology and high efficient
switched mode power supply.
FEATURES
* RDS(ON) < 2.0Ω @ VGS=10V
* High switching speed
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
3N40KL-TF3-T
3N40KL-TF1-T
3N40KG-TF3-T
3N40KG-TF1-T
3N40KG-TF2-T
3N40KG-TF3T-T
3N40KG-TM3-T
3N40KG-TMS-T
3N40KG-TN3-R
3N40KG-TND-R
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
Tube
Tube
3N40KL-TF2-T
Tube
3N40KL-TF3T-T
Tube
3N40KL-TM3-T
Tube
3N40KL-TMS-T
TO-251S
TO-252
Tube
3N40KL-TN3-R
Tape Reel
Tape Reel
3N40KL-TND-R
TO-252D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
1 of 7
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R205-033.a
3N40K-MK
Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
2 of 7
QW-R205-033.a
www.unisonic.com.tw
3N40K-MK
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
400
±30
3
V
Continuous (TC=25°C)
Pulsed (Note 2)
Single Pulsed (Note 3)
TO-220F/TO-220F1
TO-220F3
A
Drain Current
IDM
12
A
Avalanche Energy
EAS
160
mJ
25
26
50
W
W
W
Power Dissipation
TO-220F2
PD
TO-251/TO-251S
TO-252/TO-252D
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=35.6 mH, IAS=3.0 A, VDD=50V, RG=25 ꢀ, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220F/TO-220F1/
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F2/TO-220F3
TO-251/TO-251S
TO-252/TO-252D
TO-220F/TO-220F1
TO-220F3
Junction to Ambient
Junction to Case
θJA
110
°C/W
4.9
4.8
2.5
°C/W
°C/W
°C/W
TO-220F2
θJC
TO-251/TO-251S
TO-252/TO-252D
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
QW-R205-033.a
www.unisonic.com.tw
3N40K-MK
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
400
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
0.38
V/°C
µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
GS=+30V, VDS=0V
10
Forward
Reverse
V
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=1.5A
3.0
5.0
420 2.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
420 530 pF
270 300 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
42
60
pF
tD(ON)
tR
tD(OFF)
tF
40
25
60
35
ns
ns
VDS=30V, ID=0.5A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
100 130 ns
28
45
ns
nC
nC
nC
Total Gate Charge
QG
14.6 18
4.4
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
1.75
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
ISD
ISM
3.0
12
A
A
V
VSD
IS=3A, VGS=0V
1.5
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R205-033.a
www.unisonic.com.tw
3N40K-MK
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
Period
VGS
(Driver)
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
QW-R205-033.a
www.unisonic.com.tw
3N40K-MK
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
6 of 7
QW-R205-033.a
www.unisonic.com.tw
3N40K-MK
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
QW-R205-033.a
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明