3N40L-TF3-T [UTC]
3A, 400V N-CHANNEL POWER MOSFET; 3A ， 400V N沟道功率MOSFET
| 型号： | 3N40L-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 3A, 400V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N40
Preliminary
Power MOSFET
3A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220F
The UTC 3N40 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 3N40 is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
1
TO-252
FEATURES
* RDS(ON)=2.0Ω @ VGS=10V
* High switching speed
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
3N40L-TF3-T
3N40L-TN3-R
Halogen Free
1
2
D
D
3
S
S
3N40G-TF3-T
3N40G-TN3-R
TO-220F
TO-252
G
G
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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3N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
400
±30
3
V
Continuous (TC=25°C)
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220F
A
Drain Current
IDM
12
A
EAS
290
3
mJ
mJ
W
Avalanche Energy
Power Dissipation
Derate above 25°C
EAR
25
TO-252
50
W
PD
TO-220F
0.2
W/°C
W/°C
°C
TO-252
0.4
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
TSTG
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=56mH, IAS=3.0 A, VDD=50V, RG=25 ꢀ, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F
TO-252
TO-220F
TO-252
Junction to Ambient
Junction to Case
θJA
110
4.9
θJC
°C/W
2.5
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3N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
400
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
0.38
V/°C
µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
10
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=1.5A
2.0
4.0
1.6 2.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
350 460 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
60
7
80
9
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
10
3.0
4.5
12
13
nC
nC
nC
ns
VGS=10V, VDS=320V, ID=3A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 1, 2)
30
VDD=200V, ID=3A, RG=25ꢀ
60 130 ns
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
20
30
50
70
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
3.0
12
A
A
IS=3A, VGS=0V
1.5
V
IS=3A, VGS=0V, dIF/dt=100A/µs
(Note 1)
190
1.0
ns
µC
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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3N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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3N40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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3N40
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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