3N65KL-TMS-T [UTC]
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR;
| 型号： | 3N65KL-TMS-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总7页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N65K-MK
Preliminary
Power MOSFET
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N65K-MK is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 4.0Ω @ VGS = 10V, ID = 1.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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3N65K-MK
Preliminary
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
3N65KL-TA3-T
Halogen Free
3N65KG-TA3-T
1
2
3
S
S
S
S
S
S
S
S
S
S
S
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
Tube
Tube
3N65KL-TF3-T
3N65KG-TF3-T
3N65KG-TF1-T
3N65KG-TF2-T
3N65KG-TF3-T
3N65KG-TM3-T
3N65KG-TMS-T
3N65KG-TMS2-T
3N65KG-TMS4-T
3N65KG-TN3-R
3N65KG-TND-R
3N65KL-TF1-T
Tube
3N65KL-TF2-T
Tube
3N65KL-TF3-T
Tube
3N65KL-TM3-T
Tube
3N65KL-TMS-T
3N65KL-TMS2-T
3N65KL-TMS4-T
3N65KL-TN3-R
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
3N65KL-TND-R
Note: Pin Assignment: G: Gate
TO-252D
D: Drain
S: Source
MARKING
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3N65K-MK
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
650
±30
3.0
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
ID
3.0
A
IDM
12
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
75
mJ
mJ
V/ns
W
Avalanche Energy
EAR
7.5
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.5
75
TO-220F/TO-220F1
TO-220F3
34
35
W
W
Power Dissipation
PD
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
50
W
0.6
W/°C
W/°C
W/°C
TO-220F/TO-220F1
TO-220F3
0.27
0.28
Derate above 25°C
PD
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
0.4
W/°C
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=16.6mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤3.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATING
62.5
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
θJA
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
110
1.67
3.68
3.58
TO-220F/TO-220F1
TO-220F3
Junction to Case
θJC
°C/W
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
2.5
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3N65K-MK
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
650
V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°C
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID=250μA,Referenced to 25°C
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.5
4.5
4.0
V
VGS = 10V, ID = 1.5A
Ω
CISS
COSS
CRSS
388 500 pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
41
65
11
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
5.1
tD(ON)
tR
tD(OFF)
tF
43
20
94
22
14
4.2
1.6
ns
ns
Turn-On Rise Time
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
16
nC
nC
nC
VDS= 50V,ID= 1.3A,
Gate-Source Charge
QGS
QDD
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 3.0 A
1.4
3.0
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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3N65K-MK
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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3N65K-MK
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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3N65K-MK
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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