3N90Z [UTC]
3 Amps, 900 Volts N-CHANNEL POWER MOSFET;型号: | 3N90Z |
厂家: | Unisonic Technologies |
描述: | 3 Amps, 900 Volts N-CHANNEL POWER MOSFET |
文件: | 总6页 (文件大小:185K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
3N90Z
Preliminary
Power MOSFET
3 Amps, 900 Volts
N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC 3N90Z provides excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)=4.1Ω @VGS=10 V
* Ultra Low Gate Charge ( typical 22.7 nC )
* Low Reverse Transfer Capacitance ( CRSS= Typical 13 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Tube
Lead Free
Halogen Free
3N90ZG-TF1-T
1
2
3
3N90ZL-TF1-T
TO-220F1
G
D
S
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
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3N90Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VDGR
VGSS
BVGSO
VISO
IAR
RATINGS
UNIT
V
Drain-Source Voltage (VGS=0V)
Drain-Gate Voltage (RG=20kΩ)
Gate-Source Voltage
900
V
900
±20
V
Gate-Source Breakdown Voltage (IGS=±1mA)
Insulation Withstand Voltage (DC)
Avalanche Current (Note 2)
Continuous Drain Current
30(MIN)
2500
3
V
V
A
ID
3
A
Pulsed Drain Current
IDM
10
A
Single Pulse Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
EAS
180
mJ
V/ns
W
°C
°C
dv/dt
PD
4.5
25
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Notes:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. starting TJ=25 °C, ID=IAR, VDD=50V
4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX)
.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
62.5
5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
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3N90Z
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
BVDSS
IDSS
VGS=0V, ID=250μA
900
V
VDS=900V, VGS=0V
VGS=±20V, VDS=0V
1
μA
IGSS
±10 μA
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
3
3.75 4.5
V
VGS=10V, ID=1.5A
4.1 4.8
Ω
CISS
COSS
CRSS
590
63
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
13
tD(ON)
tR
tD(OFF)
tF
18
7
ns
ns
VDD=450V, ID=1.5 A, RG=4.7Ω
VGS=10V
Turn-On Rise Time
Turn-Off Delay Time
45
ns
VDD=720V, ID=1.5 A, RG=4.7Ω
VGS=10V
Turn-Off Fall Time
18
ns
Total Gate Charge
QG
22.7
4.2
12
nC
nC
nC
Gate-Source Charge
QGS
QDD
VDD=720V, ID=3A, VGS=10V
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
Source-Drain Current
VSD
ISD
ISD=3A ,VGS=0V
1.6
V
A
3
12
Source-Drain Current (Pulsed)
Reverse Recovery Current
ISDM
IRRM
tRR
A
8.7
A
ISD=3A, di/dt=100A/μs,
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 1. Pulse width=300μs, Duty cycle≦1.5%
510
ns
nC
VDD=100V, TJ=25°C
QRR
2.2
2. COSS(EQ) is defined asa constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS
.
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3N90Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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3N90Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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3N90Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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