4128D [UTC]
MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR;
| 型号： | 4128D |
| 厂家： | 
Unisonic Technologies |
| 描述： | MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 开关 |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4128D
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
MIDDLING VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
1
DESCRIPTION
The UTC 4128D is a middling voltage NPN power transistor. it
uses UTC’s advanced technology to provide customers with high
switching speed and high reliability, etc.
TO-126
The UTC 4128D is suitable for commonly power amplifier
circuit, electronic ballasts and energy-saving light etc.
FEATURES
* High switching speed
* High reliability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-126
Packing
Bulk
Lead Free
Halogen Free
4128DG-T60-K
1
2
3
4128DL-T60-K
B
C
E
Note: Pin Assignment: B: Base C: Collector
E: Emitter
4128DL-T60-T
(1)Packing Type
(1) B: Bulk
(2) T60: TO-126
(3) L: Lead Free, G: Halogen Free
(2)Package Type
(3)Lead Free
www.unisonic.com.tw
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R204-029.A
4128D
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage
350
200
V
7
V
DC
5
A
Collector Current
Base Current
Pulse (Note 2)
DC
ICP
10
A
IB
2
4
A
Pulse (Note 2)
IBP
A
Total Dissipation
PC
40
W
°C
°C
Junction Temperature
Storage Temperature Range
TJ
150
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
3.125
UNIT
°C/W
Junction to Case
θJC
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
IC=1mA, IB=0
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO
BVCEO
BVEBO
ICBO
350
200
7
V
IC=10mA, IB=0
IE=1mA, IC=0
V
V
VCB=350V, IE=0
VCE=200V, IB=0
VEB=7V, IC=0
100 µA
Collector-Emitter Cut-Off Current
Emitter Cut-Off Current
ICEO
50
10
µA
μA
V
IEBO
VCE(SAT)1
VCE(SAT)2
VBE(SAT)
hFE1
IC=1A, IB=0.2A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
IC=0.8A,VCE=5V
IC=3A,VCE=5V
IC=0.5A, VCE=10V
0.8
1.5
1.6
50
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
V
V
8
8
4
hFE2
Transition Frequency
Storage Time
Fall Time
fT
MHz
μs
tS
4
VCC=24V, IC=0.5A, IB1=-IB2=0.1A
tF
0.7
μs
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R204-029.A
www.unisonic.com.tw
4128D
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-029.A
www.unisonic.com.tw
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