4N50G-TM3-T [UTC]

N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE;


型号：	4N50G-TM3-T
厂家：	Unisonic Technologies
描述：	N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE 开关
文件：	总6页 (文件大小：167K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

4N50

Preliminary

Power MOSFET

4 Amps, 500 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

TO-220

The UTC 4N50 is an N-channel mode power MOSFET using

UTC’s advanced technology to provide customers with planar stripe

and DMOS technology. This technology allows a minimum on-state

resistance and superior switching performance. It also can withstand

high energy pulse in the avalanche and commutation mode.

The UTC 4N50 is generally applied in high efficiency switch mode

power supplies, active power factor correction and electronic lamp

ballasts based on half bridge topology.

TO-220F

FEATURES

* 4A, 500V, R_DS(ON)=2.0Ω @ V_GS=10V

* High Switching Speed

* 100% Avalanche Tested

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

4N50L-TA3-T

4N50L-TF3-T

Halogen Free

4N50G-TA3-T

4N50G-TF3-T

TO-220

TO-220F

Tube

Note: Pin Assignment: G: Gate D: Drain

S: Source

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4N50

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

500

±30

Continuous (T_C=25°C)

Pulsed (Note 1)

Drain Current

I_DM

16 *

Avalanche Current (Note 1)

Single Pulsed (Note 2)

Repetitive (Note 3)

I_AR

E_AS

216

8.5

V/ns

Avalanche Energy

E_AR

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

TO-220

TO-220F

TO-220

T_C=25°C

Power Dissipation

P_D

0.67

0.22

+150

-55~+150

Derate above 25°C

W/°C

TO-220F

Junction Temperature

Storage Temperature

T_J

°C

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

* Drain current limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

°C/W

TO-220

TO-220F

TO-220

Junction to Ambient

Junction to Case

θ_JA

62.5

1.47

θ_JC

°C/W

TO-220F

4.5

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4N50

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

500

2.0

V_DS=500V, V_GS=0V

V_GS=+30V, V_DS=0V

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=2A

4.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

1.65 2.0

ꢀ

C_ISS

C_OSS

C_RSS

485 650 pF

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_GS=10V, V_DS=400V, I_D=4A

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

(Note 4, 5)

V_DD=250V, I_D=4A, R_G=25ꢀ

(Note 4, 5)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

1.6

V_SD

t_RR

I_S=4A, V_GS=0V

I_S=4A, V_GS=0V, dI_F/dt=100A/µs

(Note 4)

µC

Q_RR

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 27mH, I_AS= 4A, V_DD= 50V, R_G= 25ꢀ, Starting T_J= 25°C

3. I_SD≤ 4A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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4N50

Preliminary

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

Gate Charge Test Circuit

Gate Charge Waveforms

V_GS

Same Type

as DUT

Q_G

12V

10V

200nF

V_DS

Q_GS

Q_GD

50kꢀ

300nF

V_GS

DUT

3mA

Charge

Unclamped Inductive Switching Waveforms

Unclamped Inductive Switching Test Circuit

V_DS

BV_DSS

BV_DSS-V_DD

E_AS

LI_AS

BV_DSS

I_AS

R_G

I_D

10V

I_D(t)

DUT

t_P

V_DD

V_DS(t)

Time

t_P

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4N50

Preliminary

Peak Diode Recovery dv/dt Test Circuit & Waveforms

Power MOSFET

DUT

V_DS

R_G

I_SD

V_GS

V_DD

Driver

Same Type

as DUT

dv/dt controlled by R_G

I_SDcontrolled by pulse period

Gate Pulse Width

V_GS

Gate Pulse Period

10V

(Driver)

_FM, Body Diode Forward Current

I_SD

di/dt

(DUT)

I_RM

Body Diode Reverse Current

V_DS

(DUT)

Body Diode Recovery dv/dt

V_SD

V_DD

Body Diode Forward

Voltage Drop

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4N50

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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