4N50L-TF3-T [UTC]
4A, 500V N-CHANNEL POWER MOSFET; 4A , 500V N沟道功率MOSFET型号: | 4N50L-TF3-T |
厂家: | Unisonic Technologies |
描述: | 4A, 500V N-CHANNEL POWER MOSFET |
文件: | 总6页 (文件大小:179K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N50
Preliminary
Power MOSFET
4A, 500V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
TO-252
TO-220
The UTC 4N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 4N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
1
FEATURES
* RDS(ON)=2.2Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
1
TO-220F
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
4N50L-TA3-T
4N50L-TF3-T
4N50L-TN3-R
Halogen Free
1
2
D
D
D
3
S
S
S
4N50G-TA3-T
4N50G-TF3-T
4N50G-TN3-R
TO-220
TO-220F
TO-252
G
G
G
Tube
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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4N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
500
±30
V
Continuous (TC=25°C)
Pulsed (Note 3)
4
A
Drain Current
IDM
16 (Note 2)
4
A
Avalanche Current (Note 3)
Single Pulsed (Note 4)
Repetitive (Note 3)
Peak Diode Recovery dv/dt (Note 5)
TO-220
IAR
A
EAS
216
mJ
mJ
V/ns
Avalanche Energy
EAR
8.5
dv/dt
4.5
85
Power Dissipation
TO-220F
TO-252
TO-220
TO-220F
TO-252
W
28
52
PD
0.67
0.22
0.41
+150
-55~+150
Derate above 25°C
W/°C
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 27mH, IAS = 4A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
5. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
62.5
110
UNIT
°C/W
TO-220
TO-220F
TO-252
TO-220
TO-220F
TO-252
Junction to Ambient
Junction to Case
θJA
1.47
4.5
θJC
°C/W
2.4
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4N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
500
2.0
V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
25
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
1.6 2.2
ꢀ
CISS
COSS
CRSS
485 650 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
65
5
90
8
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
11
3
15
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=4A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 1, 2)
5
14
21
27
20
38
52
64
50
VDD=250V, ID=4A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
4
A
A
16
1.6
IS=4A, VGS=0V
V
IS=4A, VGS=0V,
dIF/dt=100A/µs (Note 1)
36
33
ns
µC
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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4N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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4N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
Period
VGS
(Driver)
D=
P.W.
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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