4N60K [UTC]
4A, 600V N-CHANNEL POWER MOSFET;
| 型号： | 4N60K |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4A, 600V N-CHANNEL POWER MOSFET |
| 文件： | 总9页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N60K
Power MOSFET
4A, 600V N-CHANNEL
POWER MOSFET
1
1
DESCRIPTION
TO-220F
TO-220F1
The UTC 4N60K is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
1
TO-251
FEATURES
* RDS(ON) < 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
1 2
Package
Packing
3
Lead Free
Halogen Free
4N60KL-TF3-T
4N60KL-TF1-T
4N60KL-TM3-T
4N60KG-TF3-T
4N60KG-TF1-T
4N60KG-TM3-T
TO-220F
TO-220F1
TO-251
G
G
G
D
D
D
S
S
S
Tube
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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4N60K
Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
TO-220F
TO-220F1
TO-251
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
100
mJ
mJ
V/ns
Avalanche Energy
EAR
10.6
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220F/TO-220F1
TO-251
36
Power Dissipation
PD
W
50
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 12.5mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
TO-220F/TO-220F1
TO-251
Junction to Ambient
Junction to Case
θJA
°С/W
83
TO-220F/TO-220F1
TO-251
3.47
θJc
°С/W
2.5
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
DS=600V, VGS=0V
VDS=600V, VGS=0V, TC=125°С
GS=30V, VDS=0V
600
V
V
10
10
μA
μA
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
V
100 nA
-100 nA
V/°С
IGSS
VGS= -30V, VDS=0V
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
ID=250μA,Referenced to 25°C
0.6
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
5.0
2.2 2.5
V
VGS=10 V, ID=2.2A
Ω
CISS
COSS
CRSS
520 670 pF
VDS = 25V, VGS = 0V,
Output Capacitance
70
8
90
11
pF
pF
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
13
35
ns
Turn-On Rise Time
45 100 ns
VDD = 300V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
25
35
60
80
20
ns
ns
Turn-Off Fall Time
Total Gate Charge
QG
15
nC
nC
nC
V
V
DS= 480V,ID= 4.0A,
GS= 10V (Note 1, 2)
Gate-Source Charge
QGS
QGD
3.4
7.1
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
1.5
ns
VGS = 0 V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
On-State Characteristics
Transfer Characteristics
VGS
Top: 10V
10
10
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
25°С
1
5.0V
150°С
1
0.1
Notes:
Notes:
1. VDS=50V
2. 250µs Pulse Test
1. 250µs Pulse Test
2. TC=25°С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
VDS=300V
VDS=480V
1000
800
Ciss
Notes:
1. VGS=0V
VDS=120V
Coss
6
600
400
200
2. f = 1MHz
4
2
Crss
Note: ID=4A
10
Total Gate Charge, QG (nC)
0
0
0.1
20
25
0
5
15
1
10
Drain-SourceVoltage, VDS (V)
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4N60K
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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