4N65G-TN3-T [UTC]
Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3;
| 型号： | 4N65G-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor, 4A I(D), 650V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N65-E
Power MOSFET
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65-E is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristic. This power MOSFET is usually
used in high speed switching applications including power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5Ω @VGS = 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
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4N65-E
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
4N65G-TA3-T
4N65G-TF1-T
4N65G-TF2-T
4N65G-TF3-T
4N65G-TF3T-T
4N65G-TM3-T
4N65G-TMS-T
4N65G-TN3-R
4N65G-TN3-T
4N65G-T2Q-T
4N65G-TQ2-R
4N65G-TQ2-T
4N65G-K08-3030-R
1
2
D
D
D
D
D
D
D
D
D
D
D
D
S
3
S
S
S
S
S
S
S
S
S
S
S
S
S
4
-
5
-
6
-
7
-
8
-
4N65L-TA3-T
4N65L-TF1-T
4N65L-TF2-T
4N65L-TF3-T
4N65L-TF3T-T
4N65L-TM3-T
4N65L-TMS-T
4N65L-TN3-R
4N65L-TN3-T
4N65L-T2Q-T
4N65L-TQ2-R
4N65L-TQ2-T
4N65L-K08-3030-R
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
G
S
Tube
Tube
-
-
-
-
-
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
TO-251S
TO-252
Tube
-
-
-
-
-
Tape Reel
Tube
-
-
-
-
-
TO-252
-
-
-
-
-
TO-262
Tube
-
-
-
-
-
TO-263
Tape Reel
Tube
-
-
-
-
-
TO-263
DFN-8(3×3)
G
D
D
D
D
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
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4N65-E
Power MOSFET
PIN CONFIGURATION
Source
Drain
1
8
8
7
6
5
1
2
3
4
Drain
Drain
Drain
Drain
Source
Source
Source
Source
Source
Gate
2
3
4
7
6
5
Drain
Drain
Drain
Bottom
View
Top View
Gate
DFN-8(3×3)
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4N65-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
650
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note2)
±30
V
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note2)
IDM
16
A
Single Pulsed (Note3)
Repetitive (Note2)
EAS
200
mJ
mJ
V/ns
W
Avalanche Energy
EAR
10.6
4.5
Peak Diode Recovery dv/dt (Note4)
TO-220/TO-262/TO-263
dv/dt
106
TO-220F/TO-220F1
TO-220F3
36
W
Power Dissipation
PD
TO-220F2
38
50
W
W
TO-251/TO-252/TO-251S
DFN-8(3×3)
30
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°С
°С
°С
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, IAS = 3.65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-252/TO-251S
DFN-8(3×3)
SYMBOL
RATINGS
62.5
UNIT
°С/W
Junction to Ambient
Junction to Case
θJA
83
75
°С/W
°С/W
°С/W
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
1.18
3.47
°С/W
θJc
TO-220F2
3.28
2.5
°С/W
°С/W
°С/W
TO-251/TO-252/TO-251S
DFN-8(3×3)
4.17
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4N65-E
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250μA
650
V
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
10
μA
nA
Forward
Reverse
100
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
-100 nA
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
V/°С
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
V
VGS = 10 V, ID = 2.2A
2.3 2.5
Ω
CISS
COSS
CRSS
500 580
90 110
pF
pF
pF
VDS = 25 V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
15
18
tD(ON)
tR
tD(OFF)
tF
42
80
ns
ns
Turn-On Rise Time
60 100
135 175
70 110
VDS = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
70
15
21
90
21
27
nC
nC
nC
VDS= 520V, ID= 4.0A,
Gate-Source Charge
QGS
QGD
VGS= 10V (Note 1, 2)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
VGS = 0 V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
1.5
ns
VGS = 0V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
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4N65-E
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N65-E
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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4N65-E
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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