4N65G-TND-R [UTC]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | 4N65G-TND-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N65
Power MOSFET
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65 is a high voltage power MOSFET
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristic. This power
MOSFET is usually used in high speed switching applications
including power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-397.N
4N65
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
4N65G-TA3-T
4N65G-TF1-T
4N65G-TF2-T
4N65G-TF3-T
4N65G-TF3T-T
4N65G-TM3-T
4N65G-TMS-T
4N65G-TMS2-T
4N65G-TMS4-T
4N65G-TN3-R
4N65G-TND-R
4N65G-T2Q-T
4N65G-TQ2-R
4N65G-TQ2-T
4N65G-E-K08-5060-R
1
2
3
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S
4
-
5
-
6
-
7
-
8
-
4N65L-TA3-T
4N65L-TF1-T
4N65L-TF2-T
4N65L-TF3-T
4N65L-TF3T-T
4N65L-TM3-T
4N65L-TMS-T
4N65L-TMS2-T
4N65L-TMS4-T
4N65L-TN3-R
4N65L-TND-R
4N65L-T2Q-T
4N65L-TQ2-R
4N65L-TQ2-T
-
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
G
G
G
S
D
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Tube
Tube
-
-
-
-
-
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
Tube
-
-
-
-
-
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
-
-
-
-
-
Tube
-
-
-
-
-
-
-
-
-
-
Tube
Tape Reel
Tape Reel
Tube
TO-252D
TO-262
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TO-263
Tape Reel
Tube
-
-
-
-
-
TO-263
G
D
D
D
D
DFN-8(5×6)
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251,
TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252,
TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262,
TQ2: TO-263, K08-5060: DFN-8(5×6)
4N65L-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
PACKAGE
MARKING
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-263
TO-251S
DFN-8(5×6)
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4N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
650
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note2)
±30
V
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note2)
IDM
16
A
Single Pulsed (Note3)
Repetitive (Note2)
EAS
260
mJ
mJ
V/ns
W
Avalanche Energy
EAR
10.6
4.5
Peak Diode Recovery dv/dt (Note4)
TO-220/TO-262/TO-263
dv/dt
106
TO-220F/TO-220F1
TO-220F3
35
36
W
W
TO-220F2
Power Dissipation
PD
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
50
W
30
W
°С
°С
°С
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
SYMBOL
RATINGS
62.5
UNIT
°С/W
Junction to Ambient
θJA
110
°С/W
75
°С/W
°С/W
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
1.18
3.5
3.4
°С/W
°С/W
TO-220F2
Junction to Case
θJC
TO-251/ TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN-8(5×6)
2.5
°С/W
°С/W
4.17
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4N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS = 0 V, ID = 250μA
650
V
VDS = 650 V, VGS = 0 V
10
μA
μA
nA
Drain-Source Leakage Current
Gate-Source Leakage Current
V
DS = 480 V, TC =125°С
VGS = 30 V, VDS = 0 V
GS = -30 V, VDS = 0 V
100
100
Forward
Reverse
IGSS
V
-100 nA
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
ID=250μA, Referenced to 25°C
0.6
V/°С
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
V
VGS = 10 V, ID = 2.2A
2.4 2.5
Ω
CISS
COSS
CRSS
670 750
pF
pF
pF
VDS = 25 V, VGS = 0V,
Output Capacitance
70
23
90
26
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
45
85
ns
ns
Turn-On Rise Time
VDS = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
100 140
200 240
130 150
100 120
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
V
V
DS= 520V,ID= 4.0A,
GS= 10V (Note 1, 2)
Gate-Source Charge
QGS
QGD
17
20
19
26
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
VGS = 0 V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
VGS = 0V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
250
1.5
ns
Reverse Recovery Charge
QRR
μC
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
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4N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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4N65
Power MOSFET
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
Note:
1. VGS=10V
2. ID=4A
0.9
0.8
Note:
1. VGS=0V
2. ID=250µA
0.5
0.0
200
0
-50
200
-100
-50
50
100
150
-100
0
50
100
150
Junction Temperature, TJ (°С)
Junction Temperature, TJ (°С)
On-State Characteristics
Transfer Characteristics
VGS
Top: 10V
10
10
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
25°С
1
5.0V
150°С
1
0.1
Notes:
Notes:
1. VDS=50V
2. 250µs Pulse Test
1. 250µs Pulse Test
2. TC=25°С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
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4N65
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
VDS=300V
VDS=480V
1000
800
Ciss
Notes:
1. VGS=0V
VDS=120V
Coss
6
600
400
200
2. f = 1MHz
4
2
Crss
Note: ID=4A
10
Total Gate Charge, QG (nC)
0
0
0.1
20
25
0
5
15
1
10
Drain-SourceVoltage, VDS (V)
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4N65
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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