4N65KG-TF3-T [UTC]
4A, 650V N-CHANNEL POWER MOSFET; 4A ， 650V N沟道功率MOSFET
| 型号： | 4N65KG-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4A, 650V N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N65K
Power MOSFET
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65K is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-220F
Packing
Tube
Lead Free
Halogen Free
4N65KG-TF3-T
1
2
3
4N65KL-TF3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-840.A
4N65K
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
650
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note2)
±30
V
4.4
A
Continuous
ID
4.0
A
Drain Current
Pulsed (Note2)
IDM
16
A
Single Pulsed (Note3)
Repetitive (Note2)
EAS
110
mJ
mJ
V/ns
W
Avalanche Energy
EAR
10.6
Peak Diode Recovery dv/dt (Note4)
Power Dissipation
dv/dt
PD
4.5
106
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Note:
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
θJc
1.18
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4N65K
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250μA
650
V
VDS = 650 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
10
μA
Forward
Reverse
100 nA
-100 nA
V/°С
Gate-Source Leakage Current
IGSS
VGS = -30 V, VDS = 0 V
ID=250μA, Referenced to 25°C
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.6
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
2.4 2.5
V
VGS = 10 V, ID = 2.2A
Ω
CISS
COSS
CRSS
520 670 pF
VDS = 25 V, VGS = 0V,
f = 1MHz
Output Capacitance
70
8
90
11
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
13
35
ns
ns
Turn-On Rise Time
70 100
25 60
100 120
VDD = 325V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
15
3.4
7.1
20
nC
nC
nC
VDS= 520V,ID= 4.0A,
Gate-Source Charge
QGS
QGD
VGS= 10V (Note 1, 2)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 4.4A
1.4
4.4
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
17.6
A
Reverse Recovery Time
trr
250
1.5
ns
VGS = 0V, IS = 4.4A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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4N65K
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N65K
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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4N65K
Power MOSFET
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
Note:
1. VGS=10V
2. ID=4A
0.9
0.8
Note:
1. VGS=0V
2. ID=250µA
0.5
0.0
200
0
-50
200
-100
-50
50
100
150
-100
0
50
100
150
Junction Temperature, TJ (°С)
Junction Temperature, TJ (°С)
On-State Characteristics
Transfer Characteristics
VGS
Top: 10V
10
10
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
25°С
1
5.0V
150°С
1
0.1
Notes:
Notes:
1. VDS=50V
2. 250µs Pulse Test
1. 250µs Pulse Test
2. TC=25°С
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
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4N65K
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
1200
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
VDS=300V
VDS=480V
1000
800
Ciss
Notes:
1. VGS=0V
VDS=120V
Coss
6
600
400
200
2. f = 1MHz
4
2
Crss
Note: ID=4A
10
Total Gate Charge, QG (nC)
0
0
0.1
20
25
0
5
15
1
10
Drain-SourceVoltage, VDS (V)
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4N65K
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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