4N70KG-TMS4-T [UTC]

N-CHANNEL POWER MOSFET;


型号：	4N70KG-TMS4-T
厂家：	Unisonic Technologies
描述：	N-CHANNEL POWER MOSFET
文件：	总6页 (文件大小：250K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

4N70K

Power MOSFET

4.4A, 700V N-CHANNEL

POWER MOSFET

DESCRIPTION

The UTC 4N70K is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and high rugged

avalanche. This high speed switching power MOSFET is usually

used in power supplies, PWM motor controls, high efficient DC to

DC converters and bridge circuits.

FEATURES

* R_DS(ON)= 2.8Ω @V_GS= 10 V

* Ultra Low Gate Charge ( Typical 15nC )

* Low Reverse Transfer Capacitance ( C_RSS= Typical 8.0 pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-220F

Packing

Tube

Lead Free

Halogen Free

4N70KG-TF3-T

D: Drain S: Source

4N70KL-TF3-T

Note: Pin Assignment: G: Gate

www.unisonic.com.tw

1 of 6

QW-R502-841.A

4N70K

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

700

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Avalanche Current (Note 2)

4.4

Continuous

I_D

4.4

Drain Current

Pulsed (Note 2)

I_DM

17.6

Single Pulsed (Note 3)

Repetitive (Note 2)

E_AS

120

V/ns

Avalanche Energy

E_AR

10.6

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

dv/dt

P_D

4.5

Junction Temperature

T_J

+150

-55 ~ +150

°С

Operating Temperature

Storage Temperature

T_OPR

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 26.9mH, I_AS= 4.4A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

4. I_SD≤ 4.4A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

62.5

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_Jc

3.47

ELECTRICAL CHARACTERISTICS (T_A=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0 V, I_D= 250 μA

V_DS= 700 V, V_GS= 0 V

V_GS= 30 V, V_DS= 0 V

700

10 μA

Forward

Reverse

100

Gate-Source Leakage Current

I_GSS

V_GS= -30 V, V_DS= 0 V

I_D= 250μA, Referenced to 25°C

-100

△BV_DSS/△T_J

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

0.6

V/°С

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250 μA

2.0

4.0

2.6 2.8

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS= 10 V, I_D= 2.2 A

Ω

C_ISS

C_OSS

C_RSS

520 670 pF

70 90 pF

V_DS= 25 V, V_GS= 0 V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

11 pF

UNISONIC TECHNOLOGIES CO., LTD

2 of 6

QW-R502-841.A

www.unisonic.com.tw

4N70K

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

_DD= 350V, I_D= 4.4A,

MIN TYP MAX UNIT

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

13 35

45 100 ns

R_G= 25Ω (Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

25 60

35 80

Total Gate Charge

Q_G

15 20 nC

V_DS= 560V, I_D= 4.4A,

Gate-Source Charge

Gate-Drain Charge

Q_GS

Q_GD

3.4

7.1

V_GS= 10 V (Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS= 0 V, I_S= 4.4 A

1.4

4.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

17.6

Reverse Recovery Time

t_rr

250

1.5

V_GS= 0 V, I_S= 4.4 A,

dI/dt = 100 A/μs (Note 1)

Reverse Recovery Charge

Q_RR

μC

Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

3 of 6

QW-R502-841.A

www.unisonic.com.tw

4N70K

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

V_GS

(Driver)

Period

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD

4 of 6

QW-R502-841.A

www.unisonic.com.tw

4N70K

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit

Switching Waveforms

Gate Charge Test Circuit

Gate Charge Waveform

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD

5 of 6

QW-R502-841.A

www.unisonic.com.tw

4N70K

Power MOSFET

TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Breakdown Voltage

Drain Current vs.

Gate Threshold Voltage

300

250

200

150

100

300

250

200

150

100

200 400 600 800 1000 1200 1400

Drain-Source Breakdown Voltage, BV_DSS(V)

Gate Threshold Voltage, V_TH(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

6 of 6

QW-R502-841.A

www.unisonic.com.tw

相关型号：