4N80G-N-TM3-T [UTC]
Power Field-Effect Transistor;
| 型号： | 4N80G-N-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总6页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N80-N
Power MOSFET
4.0A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N80-N is a N-channel mode power MOSFET using
UTC’s advanced technology to provide costomers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance, and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 4N80-N is universally applied in high efficiency switch
mode power supply.
FEATURES
* RDS(on)<3.0Ω @VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
4N80L-TM3-T
4N80L-TN3-R
4N80G-TM3-T
4N80G-TN3-R
TO-251
TO-252
G
G
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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4N80-N
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
800
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous
4.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
IDM
16
A
Avalanche Energy
EAS
250
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
dv/dt
PD
4.0
50
Junction Temperature
TJ
+150
-55~+150
°C
°C
Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=31.25mH, IAS=4A, VDD= 50V, RG=25ꢀ, Starting TJ=25°C
4. ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
110
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.5
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4N80-N
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
800
V
mV/°C
µA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
950
VDS=800V, VGS=0V
10
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
IGSS
VDS=640V, TC=125°C
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
100
100
-100
µA
Forward
Reverse
nA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
3.0
V
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=10V, ID=2A
2.58
ꢀ
CISS
570
65
880
100
12
pF
pF
pF
Output Capacitance
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
9.5
QG
QGS
QGD
tD(ON)
tR
24
7.3
7.25
50
35
nC
nC
nC
ns
ns
ns
ns
VDS=640V, VGS=10V,
Gate-Source Charge
ID=4A (Note 1,2)
Gate-Drain Charge
Turn-ON Delay Time
60
130
110
90
Turn-ON Rise Time
110
95
VDD=400V, ID=4A,
RG=25ꢀ (Note 1,2)
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
70
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
4
A
A
16
1.4
IS =4A, VGS=0V
GS=0V, IS=4A,
dIF/dt=100A/μs (Note 1)
V
575
ns
μC
V
QRR
3.65
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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4N80-N
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N80-N
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
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4N80-N
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
200 400 600 800 1000 1200
0
1
2
3
4
5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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