4N80G-TA3-T [UTC]

4.0A, 800V N-CHANNEL POWER MOSFET; 4.0A ， 800V N沟道功率MOSFET


型号：	4N80G-TA3-T
厂家：	Unisonic Technologies
描述：	4.0A, 800V N-CHANNEL POWER MOSFET 4.0A ， 800V N沟道功率MOSFET
文件：	总6页 (文件大小：196K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

4N80

Power MOSFET

4.0A, 800V N-CHANNEL

POWER MOSFET

TO-220

DESCRIPTION

The UTC 4N80 is a N-channel mode power MOSFET using UTC’s

TO-220F

advanced technology to provide costomers planar stripe and DMOS

technology. This technology is specialized in allowing a minimum

on-state resistance, and superior switching performance. It also can

withstand high energy pulse in the avalanche and commutation mode.

The UTC 4N80 is universally applied in high efficiency switch mode

power supply.

TO-220F1

TO-252

FEATURES

* R_DS(on)=3.0Ω @V_GS=10V

* High switching speed

* Improved dv/dt capability

* 100% avalanche tested

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

4N80L-TA3-T

4N80L-TF3-T

4N80L-TF1-T

4N80L-TN3-R

4N80L-TN3-T

4N80G-TA3-T

4N80G-TF3-T

4N80G-TF1-T

4N80G-TN3-R

4N80G-TN3-T

TO-220

TO-220F

TO-220F1

TO-252

Tube

Tape Reel

Tube

TO-252

Note: Pin Assignment: G: Gate D: Drain

S: Source

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4N80

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

800

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous

4.0

Drain Current

Pulsed (Note 2)

Single Pulsed (Note 3)

Repetitive (Note 2)

I_DM

E_AS

460

V/ns

Avalanche Energy

E_AR

Peak Diode Recovery dv/dt (Note 4)

TO-220

dv/dt

4.0

106

Power Dissipation

TO-220F/TO-220F1

TO-252

P_D

Junction Temperature

Storage Temperature

T_J

+150

-55~+150

°C

T_STG

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=57mH, I_AS=4A, V_DD= 50V, R_G=25ꢀ, Starting T_J=25°C

4. I_SD≤4A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J=25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

°C/W

TO-220

Junction to Ambient

Junction to Case

TO-220F/TO-220F1

TO-252

θ_JA

62.5

110

TO-220

1.18

TO-220F/TO-220F1

TO-252

θ_JC

3.47

2.5

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4N80

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V, I_D=250µA

800

mV/°C

µA

Breakdown Voltage Temperature Coefficient ΔBV_DSS/ΔT_JI_D=250μA,Referenced to 25°C

950

V_DS=800V, V_GS=0V

Drain-Source Leakage Current

Gate-Source Leakage Current

I_DSS

I_GSS

V_DS=640V, T_C=125°C

V_DS=0V ,V_GS=30V

V_DS=0V ,V_GS=-30V

100

-100

µA

Forward

Reverse

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

V_DS=V_GS, I_D=250µA

3.0

5.0

3.0

Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

R_DS(ON)V_GS=10V, I_D=2A

2.3

ꢀ

C_ISS

680

880

100

Output Capacitance

C_OSS

C_RSS

V_DS=25V,V_GS=0V,f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

8.6

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

4.2

9.1

V_DS=640V, V_GS=10V,

Gate-Source Charge

I_D=4A (Note 1,2)

Gate-Drain Charge

Turn-ON Delay Time

100

Turn-ON Rise Time

V_DD=400V, I_D=4A,

R_G=25ꢀ (Note 1,2)

Turn-OFF Delay Time

Turn-OFF Fall Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

V_SD

t_rr

1.4

I_S=4A, V_GS=0V

_GS=0V, I_S=4A,

dI_F/dt=100A/μs (Note 1)

575

μC

Q_RR

3.65

Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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4N80

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

V_GS

(Driver)

Period

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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4N80

Power MOSFET

TEST CIRCUITS AND WAVEFORMS(Cont.)

V_DS

90%

10%

V_GS

t_D(ON)

t_D(OFF)

t_F

t_R

Switching Test Circuit

Switching Waveforms

V_GS

Q_G

10V

Q_GS

Q_GD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BV_DSS

I_AS

I_D(t)

V_DS(t)

V_DD

Time

Unclamped Inductive Switching Waveforms

t_p

Unclamped Inductive Switching Test Circuit

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4N80

Power MOSFET

TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Breakdown Voltage

Drain Current vs. Gate Threshold Voltage

300

250

200

150

100

250

200

150

100

200 400 600 800 1000 1200

Gate Threshold Voltage, V_TH(V)

Drain-Source Breakdown Voltage, BV_DSS(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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