5N50G-TF3-T [UTC]
5A, 500V N-CHANNEL POWER MOSFET; 5A ， 500V N沟道功率MOSFET
| 型号： | 5N50G-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 5A, 500V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5N50
Preliminary
Power MOSFET
5A, 500V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
TO-220F
TO-262
The UTC 5N50 is an N-channel power MOSFET adopting
UTC’s advanced technology to provide customers with DMOS,
planar stripe technology. This technology is designed to meet the
requirements of the minimum on-state resistance and perfect
switching performance. It also can withstand high energy pulse in
the avalanche and communication mode.
1
The UTC 5N50 can be used in applications, such as active
power factor correction, high efficiency switched mode power
supplies, electronic lamp ballasts based on half bridge topology.
1
FEATURES
TO-252
* RDS(ON) = 1.4Ω @VGS = 10 V
* 100% avalanche tested
* High switching speed
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
5N50L-TF3-T
5N50L-TN3-R
5N50L-T2Q-T
5N50G-TF3-T
5N50G-TN3-R
5N50G-T2Q-T
TO-220F
TO-252
TO-262
G
G
G
S
S
S
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-476.e
5N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
±30
5
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Continuous
A
Drain Current
Pulsed (Note 2)
IDM
20
A
Avalanche Current (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220F
IAR
5
A
EAS
300
7.3
mJ
mJ
V/ns
W
Avalanche Energy
EAR
dv/dt
4.5
38
Power Dissipation
TO-252
TO-262
PD
54
W
125
+150
-55~+150
W
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4.
I
SD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
110
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
TO-220F
TO-252
TO-262
TO-220F
TO-252
TO-262
Junction to Ambient
Junction to Case
θJA
62.5
3.25
2.13
1
θJC
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5N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
500
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
0.5
V/°C
V
DS=500V, VGS=0V
VDS=400V, TC=125°C
GS=30V, VDS=0V
1
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
IGSS
µA
10
Forward
Reverse
V
100 nA
-100 nA
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2.5A
2.0
4.0
1.2 1.4
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Ω
CISS
COSS
CRSS
480 625 pF
80 105 pF
VGS=0V, VDS=25V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
15
20
pF
QG
QGS
QGD
tD(ON)
tR
18
2.2
9.7
12
24
nC
nC
nC
ns
VGS=10V, VDS=400V,
ID=5A (Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
35
46 100 ns
50 110 ns
48 105 ns
VDD=250V, ID=5A,
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
5
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
trr
IS=5A, VGS=0V
1.4
V
263
1.9
ns
µC
IS=5A, VGS=0V,
dIF/dt=100A/µs (Note 1)
Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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5N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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5N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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5N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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