5N60L [UTC]
4.5 Amps, 600 Volts N-CHANNEL MOSFET; 4.5安培， 600伏特N沟道MOSFET
| 型号： | 5N60L |
| 厂家： | 
Unisonic Technologies |
| 描述： | 4.5 Amps, 600 Volts N-CHANNEL MOSFET |
| 文件： | 总6页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5N60
Power MOSFET
4.5 Amps, 600 Volts
N-CHANNEL MOSFET
1
ꢀ
DESCRIPTION
TO-220
The UTC 5N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
TO-220F
ꢀ
FEATURES
*Pb-free plating product number: 5N60L
* RDS(ON) = 2.5Ω @VGS = 10 V
* Ultra low gate charge ( typical 15 nC )
* Low reverse transfer Capacitance ( CRSS = typical 6.5 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
ꢀ
SYMBOL
2.Drain
1.Gate
3.Source
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
3
S
S
5N60-TA3-T
5N60-TF3-T
5N60L-TA3-T
5N60L-TF3-T
TO-220
G
G
Tube
Tube
TO-220F
5N60L-TA3-T
(1)Packing Type
(1) T: Tube
(2)Package Type
(3)Lead Plating
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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5N60
Power MOSFET
ꢀ
ABSOLUTE MAXIMUM RATING (TC = 25℃ unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
600
±30
VGSS
V
Avalanche Current (Note 1)
IAR
4.5
A
TC = 25℃
4.5
A
Continuous Drain Current
ID
TC = 100℃
2.6
A
Pulsed Drain Current (Note 1)
IDM
EAS
18
A
Avalanche Energy, Single Pulsed (Note 2)
Avalanche Energy, Repetitive Limited by TJ(MAX)
Peak Diode Recovery dv/dt (Note 3)
210
mJ
mJ
V/ns
W
EAR
10
dv/dt
4.5
TC = 25℃
100
Power Dissipation
PD
Derate above 25℃
0.8
W/℃
℃
Junction Temperature
TJ
+150
-55 ~ +150
Operating and Storage Temperature
TSTG
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
θJC
1.25
θCS
0.5
ꢀ
ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS =0V, ID = 250µA
600
V
VDS =600V, VGS = 0V
IDSS
1
µA
µA
Drain-Source Leakage Current
VDS =480V, TC = 125℃
10
△BVDSS/△
Breakdown Voltage Temperature
Coefficient
ID =250µA, Referenced to 25℃
0.6
V/℃
TJ
Forward
Reverse
VGS =30V, VDS = 0V
IGSS
100 nA
-100 nA
Gate-Body Leakage Current
V
GS =-30V, VDS = 0V
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
VGS(TH) VDS =VGS, ID = 250µA
RDS(ON) VGS =10V, ID = 2.25A
2.0
4.0
V
Ω
S
2.0 2.5
4.7
gFS
VDS =40V, ID = 2.25A (Note 4)
CISS
COSS
CRSS
515 670 pF
V
DS = 25V, VGS = 0V,
Output Capacitance
55
72
pF
pF
f = 1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
6.5 8.5
Delay Time
Rise Time
Delay Time
Fall Time
tD(ON)
tR
tD(OFF)
tF
10
42
38
30
90
85
ns
ns
Turn-On
Turn-Off
VDD = 300V, ID =4.5 A,
RG = 25Ω (Note 4, 5)
ns
46 100
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
15
2.5
6.6
19
nC
nC
nC
V
V
DS = 480 V, ID = 4.5A,
GS = 10 V (Note 4, 5)
QGS
QGD
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5N60
Power MOSFET
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS
VGS = 0 V, IS = 4.5 A
1.4
4.5
V
A
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
18
A
Reverse Recovery Time
tRR
V
GS = 0 V, IS = 4.5 A,
300
2.2
ns
dIF / dt = 100 A/µs (Note 4)
Reverse Recovery Charge
QRR
µC
Note 1. Repetitive Rating : Pulse width limited by TJ
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃
3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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5N60
Power MOSFET
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TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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5N60
Power MOSFET
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON )
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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5N60
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-Region Characteristics
V
GS
Top:
Bottorm :4.5V
5.0V
101
101
100
10-1
5V
100
25℃
10-1
*Notes:
*Notes:
4.5V
1. 250µs Pulse Test
1. VDS=40V
2. TC=25℃
2.250µs Pulse Test
10-2
10-1
100
101
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Drain-Source Voltage VDS (V)
,
On-Resistance Variation vs. Drain Current
and Gate Voltage
Maximum Safe Operating Area
Operation in This Area
6
5
4
3
2
100sµ
is Limited by R
DS(on)
101
100
10-1
1ms
VGS=10V
VGS=20V
1
0
0
10ms
m
s
DC
*Notes:
1. TC=25℃
2. TJ=150℃
1
3. Single Pulse
*Note: TJ=25℃
10-2
0
0
100
101
102
103
2
4
6
8
10
Drain Current, ID (A)
Drain-Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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