5N70KG-TN3-R [UTC]
N-CHANNEL POWER MOSFET;型号: | 5N70KG-TN3-R |
厂家: | Unisonic Technologies |
描述: | N-CHANNEL POWER MOSFET |
文件: | 总7页 (文件大小:248K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5N70K-MT
Power MOSFET
5A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N70K-MT is a high voltage power MOSFET designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications at power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.4Ω @ VGS =10V, ID = 2.5 A
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness
SYMBOL
www.unisonic.com.tw
1 of 7
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-B33.D
5N70K-MT
Power MOSFET
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
5N70KG-TA3-T
5N70KG-TF3-T
5N70KG-TF1-T
5N70KG-TF2-T
5N70KG-TF3-T
5N70KG-TM3-T
5N70KG-TMS-T
5N70KG-TMS2-T
5N70KG-TMS4-T
5N70KG-TN3-R
5N70KG-TND-R
1
2
3
S
S
S
S
S
S
S
S
S
S
S
5N70KL-TA3-T
5N70KL-TF3-T
5N70KL-TF1-T
5N70KL-TF2-T
5N70KL-TF3-T
5N70KL-TM3-T
5N70KL-TMS-T
5N70KL-TMS2-T
5N70KL-TMS4-T
5N70KL-TN3-R
5N70KL-TND-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
TO-252D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
UNISONIC TECHNOLOGIES CO., LTD
2 of 7
QW-R502-B33.D
www.unisonic.com.tw
5N70K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
Drain-Source Voltage
700
±30
5
V
V
A
A
A
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
ID
5
IDM
20
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
150
10
Avalanche Energy
mJ
EAR
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
4.5
108
V/ns
W
TO-220F/TO-220F1
TO-220F3
36
38
W
W
Power Dissipation
PD
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
54
W
Junction Temperature
Operation Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55~+150
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=12mH, IAS=5A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤5A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220F1/TO-220F2
TO-220F3
Junction to Ambient
θJA
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
110
°C/W
1.15
3.47
3.28
°C/W
°C/W
°C/W
TO-220F/TO-220F1
TO-220F3
Junction to Case
θJC
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
2.30
°C/W
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
QW-R502-B33.D
www.unisonic.com.tw
5N70K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS =0V, ID = 250μA
700
V
VDS =700V, VGS = 0V
VGS =30V, VDS = 0V
VGS =-30V, VDS = 0V
1
μA
Forward
Reverse
100
-100
Gate-Source Leakage Current
IGSS
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID =250μA, Referenced to 25°C
0.6
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS =VGS, ID = 250μA
2.0
4.0
V
VGS =10V, ID = 2.5A
1.86 2.4
Ω
CISS
COSS
CRSS
515 670 pF
55 72 pF
6.5 8.5 pF
VDS = 25V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
50
40
ns
ns
Turn-On Rise Time
VDD = 30V, ID =0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
180
52
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
18
23
nC
nC
nC
V
V
DS = 50 V, ID = 1.3A,
GS = 10 V (Note 1, 2)
Gate-Source Charge
QGS
QGD
6.7
3.9
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 5A
1.4
5
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R502-B33.D
www.unisonic.com.tw
5N70K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
QW-R502-B33.D
www.unisonic.com.tw
5N70K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
6 of 7
QW-R502-B33.D
www.unisonic.com.tw
5N70K-MT
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
7 of 7
QW-R502-B33.D
www.unisonic.com.tw
相关型号:
©2020 ICPDF网 联系我们和版权申明