5N80L-TA3-T [UTC]
5A, 800V N-CHANNEL POWER MOSFET; 5A ， 800V N沟道功率MOSFET
| 型号： | 5N80L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 5A, 800V N-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
5N80
Preliminary
Power MOSFET
5A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N80 is a N-channel enhancement mode power
MOSFET. It use UTC advanced technology to provide avalanche
rugged technology and low gate charge.
It can be applied in high current, high speed switching, switch
mode power supplies (SMPS), consumer and industrial lighting,
DC-AC inverters for welding equipment and uninterruptible power
supply(UPS).
FEATURES
* RDS(ON): 2.0Ω (TYP.)
* Avalanche rugged technology
* Low input capacitance
* Low gate charge
* Application oriented characterization
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
2
D
D
D
3
S
S
S
Lead Free
Halogen Free
5N80L-TA3-T
5N80L-TF1-T
5N80L-TF3-T
5N80G-TA3-T
5N80G-TF1-T
5N80G-TF3-T
TO-220
TO-220F1
TO-220F
G
G
G
Tube
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
1 of 5
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-483.d
5N80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDS
RATINGS
800
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Drain-Gate Voltage
VGS=0
VGS
±30
V
RGS=20kΩ
VDGR
ID
800
V
Continuous
Pulsed (Note 2)
5.5
A
Drain Current (Continuous)
IDM
20
A
Avalanche Energy
Power Dissipation
Single Pulsed (Note 3)
TO-220
EAS
320
mJ
125
PD
W
TO-220F /TO-220F1
TO-220
40
1
Derating Factor
W/°C
TO-220F /TO-220F1
0.32
150
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
-55~150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. Starting TJ=25°C, ID=IAR, VDD=50V
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220
1
Junction to Case
θJC
°C/W
TO-220F /TO-220F1
3.12
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-483.d
www.unisonic.com.tw
5N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS ID=250µA, VGS=0V
800
V
IDSS
VDS=800V, VGS=-0V
VGS=+30V
25
µA
Forward
+100 nA
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
3
5
5
2.5
4
V
ꢀ
A
VGS=10V, ID=2.5A
RDS(ON)
2.0
Static Drain-Source On-State Resistance
VGS=10V, ID=2.5A, TC=100°C
VDS>ID(ON)×RDS(ON)max,VGS=10V
On State Drain Current
DYNAMIC PARAMETERS
Input Capacitance
ID(ON)
CISS
COSS
CRSS
1190 1450
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
165
70
200
85
QG
QGS
QGD
tD(ON)
tR
75
9
95
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDD=500V, ID=6A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 1, 2)
33
50
85
120
30
VDD=400V, ID=2.5A, RG=50ꢀ
65
105
150
40
V
GS=10V (Note 1, 2)
VDD=640V, ID=5.5A, RG=50ꢀ
GS=10V (Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
trr
ISD=5.5A, VGS=0V
2
V
ns
nC
A
700
7.7
22
I
SD=5.5A,dI/dt=100A/µs,
DD=80V,TJ=150°C (Note 1)
Reverse Recovery Charge
Reverse Recovery Current
Source-Drain Current
QRR
IRRM
ISD
V
5.5
20
A
Source-Drain Current (Pulsed) (Note 1)
ISDM
A
Notes: 1. Pulsed: Pulse duration=300µs, duty cycle 1.5%.
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 5
QW-R502-483.d
www.unisonic.com.tw
5N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R502-483.d
www.unisonic.com.tw
5N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
Unclamped Inductive Switching Waveforms
tp
Unclamped Inductive Switching Test Circuit
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5 of 5
QW-R502-483.d
www.unisonic.com.tw
相关型号：
©2020 ICPDF网 联系我们和版权申明