6N60L-ATA3-R [UTC]
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET; 6.2安培， 600/650伏特N沟道MOSFET
| 型号： | 6N60L-ATA3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET |
| 文件： | 总7页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
6N60
Power MOSFET
6.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 6N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10V
*Pb-free plating product number: 6N60L
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
TO-220
Normal
Lead Free Plating
6N60L-x-TA3-T
1
2
3
6N60-x-TA3-T
G
D
S
Tube
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
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QW-R502-117.A
6N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
6N60-A
6N60-B
600
650
Drain-Source Voltage
Gate-Source Voltage
V
VGSS
IAR
±30
V
Avalanche Current (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
6.2
6.2
A
A
TC = 25°C
ID
TC = 100°C
3.9
A
IDM
EAS
EAR
PD
24.8
A
Single Pulsed (Note 2)
Repetitive (Note 1)
440
mJ
mJ
W
℃
℃
℃
13
Power Dissipation
62.5
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
TOPR
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATING
UNIT
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
62
2
θJC
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
6N60-A
6N60-B
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
10
µA
Forward
Reverse
100 nA
-100 nA
IGSS
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ID = 250 µA, Referenced to 25°C
0.53
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3.1A
2.0
4.0
1.5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Ω
CISS
COSS
CRSS
770 1000 pF
95 120 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
10
13
pF
tD(ON)
tR
tD(OFF)
tF
20
50
ns
Turn-On Rise Time
VDD=300V, ID =6.2A, RG =25Ω
(Note 4, 5)
70 150 ns
40 90 ns
45 100 ns
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
20
4.9
9.4
25
nC
nC
nC
V
DS=480V, ID=6.2A, VGS=10 V
Gate-Source Charge
QGS
QGD
(Note 4, 5)
Gate-Drain Charge
UNISONIC TECHNOLOGIES CO., LTD
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6N60
Power MOSFET
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS
VGS = 0 V, IS = 6.2 A
1.4
6.2
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
24.8
A
Reverse Recovery Time
tRR
VGS = 0 V, IS = 6.2 A,
290
ns
dIF/dt = 100 A/µs (Note 4)
Reverse Recovery Charge
QRR
2.35
µC
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 16.8mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 6.2A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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6N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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6N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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6N60
Power MOSFET
TYPICAL CHARACTERISTICS
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6N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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