6N60L-TMS4-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 6N60L-TMS4-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
6N60-C
Power MOSFET
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N60-C is a high voltage power MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching
applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
2
3
S
S
S
S
S
Lead Free
Halogen Free
6N60L-TF3-T
6N60L-TF1-T
6N60L-TMS-T
6N60L-TMS2-T
6N60L-TMS4-T
6N60G-TF3-T
6N60G-TF1-T
6N60G-TMS-T
6N60G-TMS2-T
6N60G-TMS4-T
TO-220F
TO-220F1
TO-251S
TO-251S2
TO-251S4
G
G
G
G
G
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-A50.C
6N60-C
Power MOSFET
MARKING
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6N60-C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
±30
6.2
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
A
ID
6.2
A
IDM
24.8
310
13
A
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-220F1
EAS
mJ
mJ
ns
W
Avalanche Energy
EAR
dv/dt
4.5
40
Power Dissipation
PD
TO-251S/TO-251S2/
TO-251S4
55
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 17mH, IAS = 6A, VDD = 90V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
TO-220/TO-220F1
TO-251S/TO-251S2/
TO-251S4
Junction to Ambient
Junction to Case
θJA
110
3.2
°C/W
°C/W
°C/W
TO-220/TO-220F1
TO-251S/TO-251S2/
TO-251S4
θJC
2.27
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6N60-C
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNI
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
T
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V, ID=250μA
DS=600V, VGS=0V
VDS=480V, VGS=0V, TJ =125°C
VGS=30V, VDS=0V
600
V
V
10
μA
Drain-Source Leakage Current
Gate- Source Leakage Current
100 μA
100 nA
-100 nA
V/°C
Forward
Reverse
IGSS
VGS=-30V, VDS=0V
△BVDSS/△TJ
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
ID=250μA, Referenced to 25°C
0.53
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
V
VGS=10V, ID=3.1A
1.1 1.5
Ω
CISS
COSS
CRSS
650
95
8
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f =1.0 MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
54
46
ns
ns
Turn-On Rise Time
VDD=30V, ID=1.0A, RG=25Ω
(Note 1, 2)
Turn-Off Delay Time
180
56
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
25
nC
nC
nC
V
DS=50V, ID=1.3A, VGS=10 V
Gate-Source Charge
QGS
QGD
6.6
4.9
(Note 1, 2)
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0 V, IS=6.2 A
1.4
6.2
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
24.8
A
Reverse Recovery Time
trr
290
ns
VGS=0 V, IS=6.2 A,
dIF/dt=100 A/μs (Note 1)
Reverse Recovery Charge
QRR
2.35
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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6N60-C
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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6N60-C
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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6N60-C
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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