6N60L-TQ2-T [UTC]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;


型号：	6N60L-TQ2-T
厂家：	Unisonic Technologies
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 开关脉冲晶体管
文件：	总6页 (文件大小：280K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

6N60

Power MOSFET

6.2A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 6N60 is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in switching power

supplies and adaptors.



FEATURES

* R_DS(ON)< 1.5Ω @V_GS= 10V

* Ultra low gate charge (typical 20 nC )

* Low reverse transfer Capacitance ( C_RSS= typical 10pF )

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness



SYMBOL



ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

6N60L-TA3-T

6N60L-TF3-T

6N60L-TF1-T

6N60L-TF2-T

6N60L-TF3T-T

6N60L-TM3-T

6N60L-TMS-T

6N60L-TN3-T

6N60L-TN3-R

6N60L-TQ2-T

6N60L-TQ2-R

Halogen Free

6N60G-TA3-T

6N60G-TF3-T

6N60G-TF1-T

6N60G-TF2-T

6N60G-TF3T-T

6N60G-TM3-T

6N60G-TMS-T

6N60G-TN3-T

6N60G-TN3-R

6N60G-TQ2-T

6N60G-TQ2-R

TO-220

TO-220F

TO-220F1

TO-220F2

TO-220F3

TO-251

Tube

TO-251S

TO-252

Tube

TO-252

Tape Reel

Tube

TO-263

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

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6N60

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_AR

RATINGS

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Avalanche Current (Note 2)

Continuous Drain Current

Pulsed Drain Current (Note 2)

6.2

I_D

6.2

I_DM

24.8

440

Single Pulsed (Note 3)

Repetitive (Note 2)

Peak Diode Recovery dv/dt (Note 4)

TO-220/TO-263

E_AS

Avalanche Energy

E_AR

dv/dt

4.5

125

TO-220F/TO-220F1

TO-220F3

Power Dissipation

P_D

TO-220F2

TO-251/TO-251S

TO-252

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°C

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L = 25mH, I_AS= 6A, V_DD= 90V, R_G= 25 Ω, Starting T_J= 25°C

4. I_SD≤ 6.2A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

TO-220/TO-220F

SYMBOL

RATING

62.5

UNIT

°C/W

TO-220F1/TO-220F2

TO-220F3/TO-263

TO-251/TO-251S

TO-252

Junction to Ambient

Junction to Case

θ_JA

110

1.0

TO-220/TO-263

TO-220F/TO-220F1

TO-220F3

3.2

θ_JC

°C/W

TO-220F2

2.97

2.27

TO-251/TO-251S

TO-252

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6N60

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

_DS=600V, V_GS=0V

V_DS=480V, V_GS=0V, T_J=125°C

_G=30V, V_DS=0V

600

μA

Drain-Source Leakage Current

Gate- Source Leakage Current

Forward

Reverse

100 nA

-100 nA

0.53 V/°C

I_GSS

V_GS=-30V, V_DS=0V

△BV_DSS/△T

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

^JI_D=250μA, Referenced to 25°C

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

2.0

4.0

1.0 1.5

V_GS=10V, I_D=3.1A

Ω

C_ISS

C_OSS

C_RSS

770 1000 pF

95 120 pF

Output Capacitance

V_DS=25V, V_GS=0V, f=1.0 MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

70 150 ns

40 90 ns

80 100 ns

V_DD=300V, I_D=6.2A, R_G=25Ω

(Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

4.9

9.4

25 nC

_DS=480V, I_D=6.2A, V_GS=10V

Gate-Source Charge

Q_GS

Q_GD

(Note 1, 2)

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS=0V, I_S=6.2 A

1.4

6.2

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

24.8

Reverse Recovery Time

t_rr

290

V_GS=0V, I_S=6.2A,

dI_F/dt =100 A/μs (Note 1)

Reverse Recovery Charge

Q_RR

2.35

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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6N60

Power MOSFET



TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

V_GS

(Driver)

Period

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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6N60

Power MOSFET



TEST CIRCUITS AND WAVEFORMS (Cont.)

V_DS

90%

10%

V_GS

t_D(ON)

t_D(OFF)

t_F

t_R

Switching Test Circuit

Switching Waveforms

V_GS

Q_G

10V

Q_GS

Q_GD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BV_DSS

I_AS

I_D(t)

V_DS(t)

V_DD

Time

t_p

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

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6N60

Power MOSFET



TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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