6N90L-T2Q-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 6N90L-T2Q-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
6N90
Preliminary
Power MOSFET
6.2 Amps, 900 Volts
N-CHANNEL POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 6N90 is an N-channel enhancement mode Power FET
1
1
using UTC’s advanced technology to provide costumers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
TO-220F
The UTC 6N90 is generally applied in high efficiency switch
mode power supplies.
TO-220F1
FEATURES
* 6.2A, 900V, RDS(on) = 2.3Ω @VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Halogen Free
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
6N90G-TA3-T
6N90G-TF3-T
6N90G-TF1-T
1
2
D
D
D
3
S
S
S
6N90L-TA3-T
6N90L-TF3-T
6N90L-TF1-T
TO-220
TO-220F
TO-220F1
G
G
G
Tube
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-492.a
6N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
900
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 1)
6.2
A
Drain Current
IDM
24
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
650
mJ
mJ
V/ns
W
Avalanche Energy
EAR
16.7
4.5
Peak Diode Recovery dv/dt (Note 3)
dv/dt
TO-220
167
Power Dissipation
PD
TO-220F/TO220F1
56
W
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Drain current limited by maximum junction temperature.
THERMAL CHARACTERISTICS
PARAMETER
TO-220
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
θJA
TO-220F/TO220F1
TO-220
62.5
0.75
Junction to Case
θJC
TO-220F/TO220F1
2.25
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6N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
900
V
△BVDSS/△TJ Reference to 25°C, ID=250µA
1.07
V/°C
VDS=900V, VGS=0V
IDSS
10
Drain-Source Leakage Current
Gate- Source Leakage Current
µA
V
DS=720V, TC=125°C
100
Forward
Reverse
VGS=+30V, VDS=0V
GS=-30V, VDS=0V
+100 nA
-100 nA
IGSS
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3.1A
3.0
5.0
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
1.93 2.3
5.5
VDS=50V, ID=3.1A (Note 4)
CISS
COSS
CRSS
1360 1770 pF
110 145 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
11
15
pF
QG
QGS
QGD
tD(ON)
tR
30
9.0
12
35
40
nC
nC
nC
ns
VGS=10V, VDS=720V, ID=6.2A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 4, 5)
80
VDD=450V, ID=6.2A, RG=25Ω
(Note 4, 5)
90 190 ns
55 120 ns
60 130 ns
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
6.0
24
A
A
ISM
VSD
tRR
IS=6.2A, VGS=0V
1.4
V
IS=6.2A, VGS=0V, dIF/dt=100A/µs
(Note 4)
630
6.9
ns
µC
QRR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 34mH, IAS = 6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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6N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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6N90
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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QW-R502-492.a
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6N90
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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