6N90ZG-TA3-T [UTC]

N-CHANNEL POWER MOSFET;


型号：	6N90ZG-TA3-T
厂家：	Unisonic Technologies
描述：	N-CHANNEL POWER MOSFET
文件：	总5页 (文件大小：251K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

6N90Z

Preliminary

Power MOSFET

6.2A, 900V N-CHANNEL

POWER MOSFET



DESCRIPTION

TO-220

TO-262

The UTC 6N90Z is an N-channel enhancement mode power

MOSFET using UTC’s advanced technology to provide costumers

with planar stripe and DMOS technology. This technology allows a

minimum on-state resistance and superior switching performance. It

also can withstand high energy pulse in the avalanche and

commutation mode.

The UTC 6N90Z is generally applied in high efficiency switch

mode power supplies.



FEATURES

* R_DS(ON)< 2.3Ω @V_GS= 10 V

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability



SYMBOL



ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

6N90ZL-TA3-T

6N90ZL-TQ2-T

6N90ZG-TA3-T

6N90ZG-TQ2-T

TO-220

TO-262

Tube

Note: Pin Assignment: G: Gate D: Drain S: Source



MARKING INFORMATION

PACKAGE

MARKING

TO-220

TO-262

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6N90Z

Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

900

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous (T_C=25°C)

Pulsed (Note 2)

6.2

Drain Current

I_DM

Single Pulsed (Note 3)

Repetitive (Note 2)

E_AS

300

V/ns

Avalanche Energy

E_AR

16.7

4.5

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

dv/dt

P_D

125

Junction Temperature

T_J

+150

-55~+150

°C

Storage Temperature

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 16.6mH, I_AS= 6A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

4. I_SD≤ 6A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°C/W

Junction to Ambient

Junction to Case

62.5

θ_JC



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

OFF CHARACTERISTICS

BV_DSSI_D=250µA, V_GS=0V

Breakdown Voltage Temperature Coefficient △BV_DSS/△T_JReference to 25°C, I_D=250µA

MIN TYP MAX UNIT

Drain-Source Breakdown Voltage

900

V/°C

µA

1.07

Drain-Source Leakage Current

I_DSS

V_DS=900V, V_GS=0V

V_GS=+20V, V_DS=0V

V_GS=-20V, V_DS=0V

-5

Forward

Reverse

µA

Gate- Source Leakage Current

I_GSS

µA

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=3.1A

3.0

5.0

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

1.72 2.3

Ω

C_ISS

C_OSS

C_RSS

1270 1770 pF

110 145 pF

Output Capacitance

V_GS=0V, V_DS=25V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

V_GS=10V, V_DS=50V, I_D=1.3A

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

(Note 1, 2)

80 110 ns

100 150 ns

210 250 ns

125 145 ns

V_DD=30V, I_D=1A, R_G=25Ω

(Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

6.2

24.8

1.4

I_SM

V_SD

t_RR

I_S=6.2A, V_GS=0V

630

6.9

µC

I_S=6.2A, V_GS=0V, dI_F/dt=100A/µs

(Note 1)

Q_RR

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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UNISONIC TECHNOLOGIES CO., LTD

6N90Z

Preliminary

Power MOSFET



TEST CIRCUITS AND WAVEFORMS

UNISONIC TECHNOLOGIES CO., LTD

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6N90Z

Preliminary

Power MOSFET



TEST CIRCUITS AND WAVEFORMS(Cont.)

V_GS

Same Type

as DUT

Q_G

12V

10V

200nF

V_DS

Q_GS

Q_GD

50kΩ

300nF

V_GS

DUT

3mA

Charge

Gate Charge Waveforms

Gate Charge Test Circuit

BV_DSS

BV_DSS-V_DD

V_DS

E_AS

LI_AS

BV_DSS

R_G

I_D

I_AS

10V

I_D(t)

DUT

t_P

V_DD

V_DS(t)

Time

Unclamped Inductive Switching Waveforms

t_P

Unclamped Inductive Switching Test Circuit

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6N90Z

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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