70N06G-TA3-T [UTC]
70 Amps, 60 Volts N-CHANNEL POWER MOSFET; 70安培， 60伏特N沟道功率MOSFET
| 型号： | 70N06G-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总8页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
70N06
Power MOSFET
70 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
TO-220
TO-262
DESCRIPTION
The UTC 70N06 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching
speed, low thermal resistance, usually used at telecom and
computer application.
1
FEATURES
* RDS(ON) = 15mΩ@VGS = 10 V
1
* Ultra low gate charge ( typical 90 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
TO-263
* Avalanche energy specified
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
3
S
S
S
S
70N06L-TA3-T
70N06L-T2Q-T
70N06L-TQ2-T
70N06L-TQ2-R
70N06G-TA3-T
70N06G-T2Q-T
70N06G-TQ2-T
70N06G-TQ2-R
TO-220
TO-262
TO-263
TO-263
G
G
G
G
Tube
Tube
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
70N06L-TA3-T
(1) R: Tape Reel, T: Tube
(1) Packing Type
(2) TA3: TO-220, T2Q: TO-262, TQ2: TO-263
(3) G: Halogen Free, L: Lead Free
(2) Package Type
(3) Lead Plating
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QW-R502-089.C
70N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
V
TC = 25°C
70
A
Continuous Drain Current
ID
TC = 100°C
56
A
Drain Current Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
EAS
EAR
dv/dt
PD
280
A
600
mJ
mJ
V/ns
W
Avalanche Energy
20
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
10
200
Junction Temperature
TJ
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Repeativity rating: pulse width limited by junction temperature
L=0.24mH, IAS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C
ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
62
θJC
1.2
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
60
V
1
μA
nA
Forward
Reverse
100
Gate-Source Leakage Current
IGSS
-100 nA
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ID = 1mA, Referenced to 25°C
0.08
12
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
15
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10 V, ID = 35 A
mΩ
CISS
COSS
CRSS
3300
530
80
pF
pF
pF
VGS = 0 V, VDS = 25 V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
12
79
80
52
90
20
30
ns
ns
Turn-On Rise Time
VDD = 30V, VGS=10V,ID =70 A
(Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
140
35
nC
nC
nC
VDS = 60V, VGS = 10 V,
Gate-Source Charge
QGS
QGD
ID = 48A (Note 1, 2)
Gate-Drain Charge (Miller Charge)
45
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70N06
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS
VGS = 0 V, IS = 70A
1.4
70
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
280
Reverse Recovery Time
tRR
VGS = 0 V, IS = 70A
90
ns
dIF / dt = 100 A/μs
Reverse Recovery Charge
QRR
300
μC
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
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70N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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70N06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width≤1μs
Duty Factor≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
QG
Same Type
as D.U.T.
10V
50kΩ
12V
0.3μF
0.2μF
QGS
QGD
VDS
VGS
DUT
1mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
R
VDD
G
10V
D.U.T.
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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70N06
Power MOSFET
TYPICAL CHARACTERISTICS
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70N06
Power MOSFET
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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70N06
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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