70N06L-TA3-T [UTC]
70 Amps, 60 Volts N-CHANNEL POWER MOSFET; 70安培, 60伏特N沟道功率MOSFET型号: | 70N06L-TA3-T |
厂家: | Unisonic Technologies |
描述: | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET |
文件: | 总8页 (文件大小:159K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
70N06
MOSFET
70 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
TO-220
ꢀ
DESCRIPTION
The UTC 70N06 is n-channel enhancement mode
power field effect transistors with stable off-state
characteristics, fast switching speed, low thermal
resistance, usually used at telecom and computer
application.
1
TO-220F
ꢀ
FEATURES
*Pb-free plating product number: 70N06L
* RDS(ON) = 15mΩ@VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
ꢀ
SYMBOL
2.Drain
1.Gate
3.Source
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
2
D
D
3
S
S
70N06-TA3-T
70N06-TF3-T
70N06L-TA3-T
70N06L-TF3-T
TO-220
G
G
Tube
Tube
TO-220F
70N06L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., LTD
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QW-R502-089,A
70N06
MOSFET
ꢀ
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate to Source Voltage
60
±20
VGSS
V
TC = 25℃
70
A
Continuous Drain Current
ID
TC = 100℃
56
A
Drain Current Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation (TC = 25℃)
Derating Factor above 25℃
IDM
EAS
280
A
600
mJ
mJ
V/ns
W
EAR
20
dv/dt
10
200
PD
1.4
W/℃
℃
Operation Junction Temperature
Storage Temperature
TJ
-55 ~ +150
-55 ~ +150
℃
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
SYMBOL
θJC
MIN
TYP
0.5
MAX
1.2
UNIT
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
θCS
Thermal Resistance, Junction-to-Ambient
θJA
62.5
ꢀ
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS = 0 V, ID = 250 µA
60
V
V/℃
µA
△BVDSS/△T
J ID = 1mA, Referenced to 25℃
0.08
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V,
TJ = 150℃
1
Drain-Source Leakage Current
IDSS
10
µA
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
100
nA
nA
IGSS
-100
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 35 A
2.0
4.0
15
V
12
mΩ
Dynamic Characteristics
Input Capacitance
CISS
COSS
CRSS
3300
530
80
pF
pF
pF
V
GS = 0 V, VDS = 25 V
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
12
79
80
52
90
20
30
ns
ns
V
V
DD = 30V, ID =70 A,
GS=10V, (Note 4, 5)
Turn-Off Delay Time
Fall Time
ns
ns
Total Gate Charge
QG
140
35
nC
nC
nC
VDS = 60V, VGS = 10 V
ID = 48A, (Note 4, 5)
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
QGS
QGD
45
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70N06
MOSFET
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
VSD
IS
IS = 70A, VGS = 0 V
Integral Reverse p-n Junction Diode in
the MOSFET
1.4
70
V
Continuous Source Current
D
A
G
Pulsed Source Current
ISM
280
S
Reverse Recovery Time
Reverse Recovery Charge
tRR
IS = 70A, VGS = 0 V
dIF / dt = 100 A/µs
90
ns
QRR
300
µC
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH, IAS=70A, RG=20Ω, Starting TJ=25℃
3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
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70N06
MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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70N06
MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON )
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
1mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RG
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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70N06
MOSFET
ꢀ
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-State Characteristics
V
GS
Top : 15V
10 V
8 V
С
°
7 V
6 V
5 .5V
102
101
0
5
102
101
1
5V
Bottorm :4.5V
4.5V
С
°
5
2
Note:
1 .VDS =25V
2. 20µs Pulse Test
100
100
101
10-1
100
2
3
4
5
6
7
8
9 10
Gate -Source Voltage , VGS (V)
Drain-Source Voltage , VDS (V)
On-Resistance Variation vs. Drain
Current and Gate Voltage
Reverse Drain Current vs. Allowable
Case Temperature
15
102
14
150℃
VGS=10V
13
12
11
101
25℃
*Note:
1. VGS=0V
2. 250µs Test
100
0
10 20 30 40 50 60 70 80 90 100
Drain Current, ID (A)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
6000
5000
4000
CISS=CGS+CGD (CDS=shorted)
COSS=CDS+CGD
CRSS=CGD
10
CISS
8
VDS=38V
3000
2000
6
VDS=60V
4
*Note:
1. VGS=0V
2.f = 1MHz
1000
0
2
CRSS
*Note: ID=48A
COSS
0
10 15
0
5
20 25 30 35 40 45
5
10 15 20 25 30 35
Total Gate Charge, QG (nC)
Drain-Source Voltage, VDC (V)
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70N06
MOSFET
ꢀ
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs. Junction
Temperature
On-Resistance Variation vs.
Junction Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
*Note:
1. VGS=0V
2. ID=250µA
*Note:
1. VGS=10V
2. ID=35A
0.9
0.8
0.5
0.0
200
-100 -50
0
50 100 150
-50
0
50
100
150
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating
70
60
Operation in This
Area by RDS (on)
100
50
100µs
10
40
30
20
10ms
DC
1ms
1
*Note:
1. Tc=25℃
10
0
2. TJ=150℃
3.Single Pulse
0.1
150
25
50
75
100
125
1
10
100
1000
Drain-Source Voltage, VD (V)
Case Temperature, TC (℃)
Transient Thermal Response Curve
D=0.5
1
0.2
0.1
0.1
0.05
0.02
*Note:
0.01
1.
ZθJC (t) = 0.88℃/W Max.
0.01
2. Duty Factor , D=t1/t2
Single pulse
3. TJ -TC=PDM×ZθJC (t )
1
10
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration, t1 (sec)
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70N06
MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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