70N06T-TF3-T [UTC]

70 Amps, 60 Volts N-CHANNEL POWER MOSFET; 70安培， 60伏特N沟道功率MOSFET


型号：	70N06T-TF3-T
厂家：	Unisonic Technologies
描述：	70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70安培， 60伏特N沟道功率MOSFET
文件：	总8页 (文件大小：159K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

70N06

MOSFET

70 Amps, 60 Volts

N-CHANNEL POWER MOSFET

TO-220

ꢀ

DESCRIPTION

The UTC 70N06 is n-channel enhancement mode

power field effect transistors with stable off-state

characteristics, fast switching speed, low thermal

resistance, usually used at telecom and computer

application.

TO-220F

ꢀ

FEATURES

*Pb-free plating product number: 70N06L

* R_DS(ON)= 15mΩ@V_GS= 10 V

* Ultra low gate charge ( typical 90 nC )

* Low reverse transfer Capacitance ( C_RSS= typical 80 pF )

* Fast switching capability

* 100% avalanche energy specified

* Improved dv/dt capability

ꢀ

SYMBOL

2.Drain

1.Gate

3.Source

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

70N06-TA3-T

70N06-TF3-T

70N06L-TA3-T

70N06L-TF3-T

TO-220

Tube

TO-220F

70N06L-TA3-T

(1)Packing Type

(2)Package Type

(3)Lead Plating

(1) T: Tube

(2) TA3: TO-220, TF3: TO-220F

(3) L: Lead Free Plating, Blank: Pb/Sn

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ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Gate to Source Voltage

±20

V_GSS

T_C= 25℃

Continuous Drain Current

I_D

T_C= 100℃

Drain Current Pulsed (Note 1)

Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)

Total Power Dissipation (T_C= 25℃)

Derating Factor above 25℃

I_DM

E_AS

280

600

V/ns

E_AR

dv/dt

200

P_D

1.4

W/℃

℃

Operation Junction Temperature

Storage Temperature

T_J

-55 ~ +150

℃

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

THERMAL DATA

PARAMETER

SYMBOL

θ_JC

MIN

TYP

0.5

MAX

1.2

UNIT

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

θ_CS

Thermal Resistance, Junction-to-Ambient

θ_JA

62.5

ꢀ

ELECTRICAL CHARACTERISTICS (T_C=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Off Characteristics

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

BV_DSS

V_GS= 0 V, I_D= 250 µA

V/℃

µA

△BV_DSS/△T

_JI_D= 1mA, Referenced to 25℃

0.08

V_DS= 60 V, V_GS= 0 V

V_DS= 60 V, V_GS= 0 V,

T_J= 150℃

Drain-Source Leakage Current

I_DSS

µA

Gate-Source Leakage Current

Gate-Source Leakage Reverse

On Characteristics

V_GS= 20V, V_DS= 0 V

V_GS= -20V, V_DS= 0 V

100

I_GSS

-100

Gate Threshold Voltage

Static Drain-Source On-State

Resistance

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250 µA

V_GS= 10 V, I_D= 35 A

2.0

4.0

mΩ

Dynamic Characteristics

Input Capacitance

C_ISS

C_OSS

C_RSS

3300

530

_GS= 0 V, V_DS= 25 V

Output Capacitance

f = 1MHz

Reverse Transfer Capacitance

Switching Characteristics

Turn-On Delay Time

Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

_DD= 30V, I_D=70 A,

_GS=10V, (Note 4, 5)

Turn-Off Delay Time

Fall Time

Total Gate Charge

Q_G

140

V_DS= 60V, V_GS= 10 V

I_D= 48A, (Note 4, 5)

Gate-Source Charge

Gate-Drain Charge (Miller Charge)

Q_GS

Q_GD

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70N06

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ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Source-Drain Diode Ratings and Characteristics

Diode Forward Voltage

V_SD

I_S

I_S= 70A, V_GS= 0 V

Integral Reverse p-n Junction Diode in

the MOSFET

1.4

Continuous Source Current

Pulsed Source Current

I_SM

280

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_S= 70A, V_GS= 0 V

dI_F/ dt = 100 A/µs

Q_RR

300

µC

Note 1. Repeativity rating: pulse width limited by junction temperature

2. L=19.5mH, I_AS=70A, R_G=20Ω, Starting T_J=25℃

3. I_SD≤48A, di/dt≤300A/µs, V_DD≤BV_DSS, Starting T_J=25℃

4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%

5. Essentially independent of operating temperature.

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TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

V_GS

(Driver)

Period

P.W.

Period

10V

V_GS=

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

(D.U.T.)

V_DD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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MOSFET

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TEST CIRCUITS AND WAVEFORMS (Cont.)

R_L

V_DS

90%

V_DD

V_GS

R_G

10%

V_GS

D.U.T.

10V

t_{D(ON )}

t_D(OFF)

Pulse Width ≤ 1μs

Duty Factor ≤0.1%

t_F

t_R

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

as D.U.T.

50kΩ

Q_G

12V

10V

0.3μF

0.2μF

V_DS

Q_GS

Q_GD

V_GS

DUT

V_G

1mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

R_G

V_DD

10V

D.U.T.

t_p

I_AS

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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TYPICAL CHARACTERISTICS

Transfer Characteristics

On-State Characteristics

Top : 15V

10 V

8 V

7 V

6 V

5 .5V

10²

10¹

10²

10¹

Bottorm :4.5V

4.5V

Note:

1 .V_DS=25V

2. 20µs Pulse Test

10⁰

10¹

10^-1

10⁰

9 10

Gate -Source Voltage , V_GS(V)

Drain-Source Voltage , V_DS(V)

On-Resistance Variation vs. Drain

Current and Gate Voltage

Reverse Drain Current vs. Allowable

Case Temperature

10²

150℃

V_GS=10V

10¹

25℃

*Note:

1. V_GS=0V

2. 250µs Test

10⁰

10 20 30 40 50 60 70 80 90 100

Drain Current, I_D(A)

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Source-Drain Voltage, V_SD(V)

Capacitance Characteristics

(Non-Repetitive)

Gate Charge Characteristics

6000

5000

4000

C_ISS=C_GS+C_GD(C_DS=shorted)

C_OSS=C_DS+C_GD

C_RSS=C_GD

C_ISS

V_DS=38V

3000

2000

V_DS=60V

*Note:

1. V_GS=0V

2.f = 1MHz

1000

C_RSS

*Note: I_D=48A

C_OSS

10 15

20 25 30 35 40 45

10 15 20 25 30 35

Total Gate Charge, Q_G(nC)

Drain-Source Voltage, V_DC(V)

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TYPICAL CHARACTERISTICS

Breakdown Voltage Variation vs. Junction

Temperature

On-Resistance Variation vs.

Junction Temperature

3.0

2.5

2.0

1.5

1.0

1.2

1.1

1.0

*Note:

1. V_GS=0V

2. I_D=250µA

*Note:

1. V_GS=10V

2. I_D=35A

0.9

0.8

0.5

0.0

200

-100 -50

50 100 150

-50

100

150

Junction Temperature, T_J(℃)

Maximum Drain Current vs. Case

Temperature

Maximum Safe Operating

Operation in This

Area by R_{DS (on)}

100

100µs

10ms

1ms

*Note:

1. T_c=25℃

2. T_J=150℃

3.Single Pulse

0.1

150

100

125

100

1000

Drain-Source Voltage, V_D(V)

Case Temperature, T_C(℃)

Transient Thermal Response Curve

D=0.5

0.2

0.1

0.05

0.02

*Note:

0.01

Z_θJC(t) = 0.88℃/W Max.

0.01

2. Duty Factor , D=t1/t2

Single pulse

3. T_J-T_C=P_DM×Z_θJC(t )

1E-5 1E-4 1E-3 0.01

0.1

Square Wave Pulse Duration, t₁(sec)

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70N06

MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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