75N75G-TF1-T [UTC]
Power Field-Effect Transistor;
| 型号： | 75N75G-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总6页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
75N75
Power MOSFET
80A, 75V N-CHANNEL
POWER MOSFET
1
1
TO-220F
TO-220
DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching
speed, low thermal resistance, usually used at telecom and
computer application.
1
1
TO-220F1
TO-220F2
FEATURES
* RDS(ON)=11mΩ @VGS=10V, ID=40A
* Ultra low gate charge ( typical 117 nC )
* Fast switching capability
1
TO-263
* Low reverse transfer Capacitance (CRSS= typical 240 pF )
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
S
75N75L-TA3-T
75N75L-TF1-T
75N75L-TF2-T
75N75L-TF3-T
75N75L-TQ2-T
75N75L-TQ2-R
75N75G-TA3-T
75N75G-TF1-T
75N75G-TF2-T
75N75G-TF3-T
75N75G-TQ2-T
75N75G-TQ2-R
TO-220
TO-220F1
TO-220F2
TO-220F
TO-263
G
G
G
G
G
G
D
D
D
D
D
D
Tube
Tube
Tube
Tube
Tube
TO-263
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd.
QW-R502-097.F
75N75
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
75
±20
V
Continuous Drain Current
TC = 25°C
80
A
Pulsed Drain Current (Note 2)
IDM
320
A
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
700
mJ
V/ns
W
dv/dt
12
TO-220/TO-263
300
Power Dissipation
TO-220F/ TO-220F1
TO-220F2
PD
48
W
50
W
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. Starting TJ=25°C, ID=40A, VDD=37.5V
4. ISD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
0.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
TO-220/TO-263
TO-220F/ TO-220F1
TO-220F2
θJC
2.6
2.5
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75N75
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = 75 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
75
V
1
µA
Forward
Reverse
100 nA
-100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 40 A
2.0
3.0
9.5
4.0
11
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
mꢀ
CISS
COSS
CRSS
3700
773
86
pF
pF
pF
VGS = 0 V, VDS = 25 V
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
133 150
208 232
354 370
246 260
ns
ns
ns
ns
Turn-On Rise Time
VDD = 37.5V, ID =45A,
VGS=10V, RG=4.7ꢀ
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
430 440 nC
V
DS = 60V, VGS = 10 V
Gate-Source Charge
QGS
QGD
70
nC
nC
ID = 80A
Gate-Drain Charge
102
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
Continuous Source Current
VSD
IS
VGS = 0 V, IS = 80A
1.5
80
V
A
Pulsed Source Current (Note 1)
Reverse Recovery Time
ISM
tRR
QRR
320
A
132
660
ns
µC
IS = 80A, VDD = 25 V
dIF / dt = 100 A/µs
Reverse Recovery Charge
Note: 1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-097.F
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75N75
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VD
S
-
+
-
L
RG
Drive
r
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same
Type as
D.U.T.
VGS
1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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75N75
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2A Switching Test Circuit
2B Switching Waveforms
3A Gate Charge Test Circuit
3B Gate Charge Waveform
4A Unclamped Inductive Switching Test Circuit
4B Unclamped Inductive Switching Waveforms
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75N75
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
450
400
350
300
200
150
250
200
150
100
50
100
50
0
0
0.5
0
1
1.5 2.0 2.5
3.0 3.5 4.0
0
20
40
60
80
100
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
Drain Current vs. Source to Drain Voltage
Drain-Source On-State Resistance
Characteristics
2
12
10
1.8
1.6
1.4
1.2
1
VGS=10V
ID=1A
VGS=10V
ID=20A
8
6
4
0.8
0.6
0.4
0.2
0
2
0
0
100
150
200
0
0.4
0.6
50
0.8
1.0
0.2
Drain to Source Voltage, VDS (mV)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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