7N60AG-X-TF3-T [UTC]
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET; 7安培， 600/650伏特N沟道功率MOSFET
| 型号： | 7N60AG-X-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
7N60A
Power MOSFET
7 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N60A is a high voltage N-Channel enhancement
mode power field effect transistors and is designed to have
minimize on-state resistance provide superior switching
,
performance, and withstand high energy pulse in the avalanche
and commutation mode. This power MOSFET is well suited for
high efficiency switch mode power supply.
FEATURES
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge (typical 28 nC )
* Low reverse transfer Capacitance (CRSS= typical 12 pF )
* Fast switching capability
Lead-free:
Halogen-free: 7N60AG
7N60AL
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free Plating
7N60AL-x-TA3-T
7N60AL-x-TF1-T
7N60AL-x-TF3-T
Halogen Free
1
2
D
D
D
3
S
S
S
7N60AG-x-TA3-T
7N60AG-x-TF1-T
7N60AG-x-TF3-T
TO-220
TO-220F1
TO-220F
G
G
G
Tube
Tube
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2009 Unisonic Technologies Co., Ltd
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VQW-R502-111,D
7N60A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
7N60A-A
SYMBOL
VDSS
RATINGS
UNIT
V
600
Drain-Source Voltage
7N60A-B
650
V
Gate-Source Voltage
VGSS
IAR
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
7
A
ID
7
28
A
IDM
EAS
EAR
A
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220
330
mJ
mJ
W
W
°C
°C
Avalanche Energy
Power Dissipation
7.5
65
PD
TO-220F/TO-220F1
30
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ(MAX)
3. L = 12.05mH, IAS = 7.4A, VDD=50V, RG = 27 Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220
SYMBOL
θJA
RATINGS
83.3
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
TO-220F/TO-220F1
TO-220
θJA
62.5
θJC
1.92
TO-220F/TO-220F1
θJC
4.16
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
7N60A-A
7N60A-B
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30 V, VDS = 0 V
10
µA
Forward
Reverse
100 nA
-100 nA
IGSS
VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID = 3.5A (Note 4)
1.0 1.2
Ω
CISS
COSS
CRSS
950 1430 pF
85 130 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
12
18
pF
tD(ON)
tR
tD(OFF)
tF
16
60
80
65
28
ns
ns
ns
ns
nC
Turn-On Rise Time
VDD=300V, ID =7A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
42
VDS=300V, ID=7A, VGS=10 V
(Note 1, 2)
Gate-Source Charge
QGS
QGD
5.5 8.3 nC
Gate-Drain Charge
11
17
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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VQW-R502-111,D
7N60A
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
IS
VGS = 0V, IS = 7A
1.4
7
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
28
A
Reverse Recovery Time
tRR
VGS = 0V, IS = 7A,
365
ns
dIF / dt = 100A/μs (Note 1)
Reverse Recovery Charge
QRR
4.23
µC
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
VQW-R502-111,D
7N60A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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VQW-R502-111,D
7N60A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3µF
0.2µF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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VQW-R502-111,D
7N60A
Power MOSFET
TYPICAL CHARACTERISTICS
Reverse Drain Current vs.
Source Drain Voltage
ON Resistance vs. Drain Current
2.5
Note:
Note:
1. VDS=10V
1. Td=25°C
2. Pulse test
2. Pulsed test
2.0
1.5
VGS=10V
101
100
VGS=20V
1.0
0.8
0
10-1
1.2
0
5
10
15
20
25
0.4
0.6
0.8
1.0
8
1.4
Drain Current, ID (A)
Source Drain Voltage, VSD (V)
Capacitance vs. Drain Source Voltage
Gate Source Voltage vs. Total Gate Charge
10000
1000
100
Note:
1. ID = 7A
2. TC = 25°C
10
5
CISS
VDD = 80V
VDD = 300V
VDD = 200V
COSS
CRSS
Note:
1. VGS: 0V
2. f = 1MHz
3. TC = 25°C
10
1
0
30
0.1
1
10
100
5
10
15
20
25
35
Drain Source Voltage, VDS (A)
Total Gate Charge, QG (nC)
UNISONIC TECHNOLOGIES CO., LTD
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VQW-R502-111,D
7N60A
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Drain-Source Voltage vs.
Junction Temperature
ON-Resistance vs. Junction Temperature
3.0
2.5
1.2
1.1
Note:
Note:
1. VGS = 10V
2. ID = 3.5A
1. VGS = 0V
2. ID = 250µA
2.0
1.5
1.0
0.9
1.0
0.5
0.8
0.0
50
125 150
175
-50 -25
0
25 50 75 100 125 150 175
-50 -25 0 25
75 100
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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VQW-R502-111,D
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