7N60AL-X-TA3-T [UTC]
7 Amps, 600/650 Volts N-CHANNEL MOSFET; 7安培， 600/650伏特N沟道MOSFET
| 型号： | 7N60AL-X-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 7 Amps, 600/650 Volts N-CHANNEL MOSFET |
| 文件： | 总7页 (文件大小：341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
7N60A
Power MOSFET
7 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 7N60A is a high voltage N-Channel enhancement
mode power field effect transistors and is designed to have
minimize on-state resistance provide superior switching
,
performance, and withstand high energy pulse in the avalanche
and commutation mode. This power MOSFET is well suited for
high efficiency switch mode power supply.
FEATURES
* RDS(ON) = 1.2Ω @VGS = 10 V
*Pb-free plating product number:7N60AL
* Ultra low gate charge (typical 28 nC )
* Low reverse transfer Capacitance (CRSS= typical 12 pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
2
D
D
3
S
S
7N60A-x-TA3-T
7N60A-x-TF3-T
7N60AL-x-TA3-T
7N60AL-x-TF3-T
TO-220
Tube
Tube
G
G
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
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7N60A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
7N60A-A
7N60A-B
600
Drain-Source Voltage
Gate-Source Voltage
VDSS
650
V
VGSS
IAR
±30
V
Avalanche Current (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
7
A
TC = 25°C
7
3.2
A
ID
TC = 100°C
A
IDM
EAS
EAR
PD
28
A
Single Pulsed (Note 2)
Repetitive Limited by TJ(MAX)
330
mJ
mJ
W
℃
℃
℃
7.5
Power Dissipation
30
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
TOPR
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
62.5
4.16
UNIT
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
θJC
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
7N60A-A
7N60A-B
600
650
V
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
IDSS
IGSS
VDS = 600V, VGS = 0V
VDS = ±30V, VGS = 0V
1
µA
±100 nA
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID = 3.5A (Note 4)
1.0 1.2
Ω
CISS
COSS
CRSS
950 1430 pF
85 130 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
12
18
pF
tD(ON)
tR
tD(OFF)
tF
16
60
80
65
28
ns
ns
ns
ns
nC
Turn-On Rise Time
VDD=300V, ID =7A, RG =25Ω
(Note 3, 4)
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
42
VDS=300V, ID=7A, VGS=10 V
(Note 3, 4)
Gate-Source Charge
QGS
QGD
5.5 8.3 nC
Gate-Drain Charge
11
17
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage (Note 4)
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 7A
1.4
7
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
28
A
Reverse Recovery Time
tRR
VGS = 0V, IS = 7A,
dIF / dt = 100A/µs
365
ns
Reverse Recovery Charge
QRR
4.23
µC
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7N60A
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.8mH, IAS = 7A, VDD=50V, RG = 27 Ω
3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
4. Essentially independent of operating temperature
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7N60A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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7N60A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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7N60A
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source Voltage
VGS
Drain Current vs. Gate-Source Voltage
20
18
16
Note:
1. VDS=10V
2. Pulse test
Top
10V
9V -4.5V
8V
7V
6V
-3V
14
12
10
101
100
5V
Buttom: 4V
-2.5V
8
6
4
2
150℃
VGS=-2V
25℃
-55℃
10-1
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10
Drain Source Voltage, VDS (V)
Gate Source Voltage, VGS (V)
Reverse Drain Current vs.
Source Drain Voltage
ON Resistance vs. Drain Current
2.5
Note:
Note:
1. VDS=10V
2. Pulse test
1. Td=25℃
2. Pulsed test
2.0
1.5
VGS=10V
101
100
VGS=20V
150℃
25℃
1.0
0.8
0
10-1
1.2
0
5
10
15
20
25
0.4
0.6
0.8
1.0
8
1.4
Drain Current, ID (A)
Source Drain Voltage, VSD (V)
Capacitance vs. Drain Source Voltage
Gate Source Voltage vs. Total Gate Charge
10000
1000
100
Note:
1. ID = 7A
2. TC = 25℃
10
5
CISS
VDD = 80V
VDD = 300V
VDD = 200V
COSS
CRSS
Note:
1. VGS: 0V
2. f = 1MHz
3. TC = 25℃
10
1
0
30
0.1
1
10
100
5
10
15
20
25
35
Drain Source Voltage, VDS (A)
Total Gate Charge, QG (nC)
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7N60A
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Drain-Source Voltage vs.
Junction Temperature
ON-Resistance vs.
Junction Temperature
3.0
2.5
1.2
1.1
Note:
1. VGS = 0V
2. ID = 250μA
2.0
1.5
1.0
0.9
1.0
0.5
Note:
1. VGS = 10V
2. ID = 3.5A
0.8
0.0
50
125 150
175
-50 -25
0
25 50 75 100 125 150 175
-50 -25 0 25
75 100
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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