7NM70L-TF1-T [UTC]

N-CHANNEL POWER MOSFET;


型号：	7NM70L-TF1-T
厂家：	Unisonic Technologies
描述：	N-CHANNEL POWER MOSFET
文件：	总7页 (文件大小：285K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

7NM70

Power MOSFET

7A, 700V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 7NM70 is a high voltage super junction MOSFET and

is designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in power supplies, PWM

motor controls, high efficient DC to DC converters and bridge

circuits.



FEATURES

* R_DS(ON)< 1.2Ω @ V_GS= 10V, I_D= 3.5A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL



RDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

7NM70L-TA3-T

7NM70L-TF3-T

7NM70L-TF1-T

7NM70L-TF2-T

7NM70L-TF3T-T

7NM70L-TM3-T

7NM70L-TMS2-T

7NM70L-TN3-R

7NM70G-TA3-T

7NM70G-TF3-T

7NM70G-TF1-T

7NM70G-TF2-T

7NM70G-TF3T-T

7NM70G-TM3-T

7NM70G-TMS2-T

7NM70G-TN3-R

TO-220

TO-220F

TO-220F1

TO-220F2

TO-220F3

TO-251

Tube

TO-251S2

TO-252

Tube

Tape Reel

Note: Pin Assignment: G: Gate D: Drain

S: Source

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QW-R205-047.B

7NM70

Power MOSFET

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MARKING

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7NM70

Power MOSFET

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ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

700

±30

7.0

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

T_C= 25°C

Continuous Drain Current

I_D

T_C= 100°C

4.7

Drain Current Pulsed (Note 2)

I_DM

E_AS

Avalanche Energy, Single Pulsed (Note 3)

Avalanche Energy, Repetitive, Limited by T_JMAX

Peak Diode Recovery dv/dt (Note 4)

TO-220

V/ns

E_AR

14.2

4.2

dv/dt

142

TO-220F/TO-220F1

TO-220F3

Power Dissipation

(T_C= 25°C)

P_D

TO-220F2

TO-251/TO-251S2

TO-252

Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L=20mH, I_AS=2A, V_DD=50V, R_G=0 Ω, Starting T_J=25°C

4. I_SD≤ 7.0A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J=25°C



THERMAL DATA

PARAMETER

TO-220/TO-220F

SYMBOL

RATING

62.5

UNIT

°C/W

TO-220F1/TO-220F2

TO-220F3

Junction to Ambient

Junction to Case

θ_JA

TO-251/TO-251S2

TO-252

110

0.88

2.6

TO-220

TO-220F/TO-220F1

TO-220F3

θ_JC

°C/W

TO-220F2

2.5

TO-251/TO-251S2

TO-252

2.08

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7NM70

Power MOSFET

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ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

700

V_DS= 700V, V_GS= 0V

μA

Drain-Source Leakage Current

Gate-Source Leakage Current

_DS= 560V, T_C= 125°C

V_GS= 30V, V_DS= 0V

_GS= -30V, V_DS= 0V

Forward

Reverse

100 nA

-100 nA

I_GSS

I_D= 250mA

Referenced to 25°C

△BV_DSS/△T_J

Breakdown Voltage Temperature Coefficient

0.67

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

Drain-Source ON-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.0

4.0

1.2

V_GS= 10V, I_D= 3.5A

Ω

C_ISS

C_OSS

C_RSS

340

120

6.5

V_DS= 25V, V_GS= 0V,

Output Capacitance

f = 1MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Total Gate Charge

Q_G

Q_GS

Q_DD

t_D(ON)

t_R

V_DS= 50V, V_GS= 10V

I_D= 1.3A, , I_G=100μA

(Note 1, 2)

Gate-Source Charge

Gate-Drain Charge

5.2

140

Turn-on Delay Time

V_DD= 30V, V_GS= 10V

Turn-on Rise Time

I_D= 0.5A, R_G= 25Ω

(Note 1, 2)

Turn-off Delay Time

t_D(OFF)

t_F

Turn-off Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS= 0V, I_S=7.0A

1.4

7.0

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Reverse Recovery Time

t_rr

V_GS= 0 V, I_S= 7.0A,

317

dI_F/dt = 100 A/μs

Reverse Recovery Charge (Note 1)

Q_RR

3.03

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

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7NM70

Power MOSFET

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TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit

Period

P. W.

Period

V_GS

(Driver)

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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Power MOSFET

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TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit

Switching Waveforms

Gate Charge Test Circuit

Gate Charge Waveform

V_DS

BV_DSS

I_AS

R_D

V_DD

I_D(t)

V_DS(t)

V_DD

10V

D.U.T.

t_p

Time

t_p

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

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Power MOSFET

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TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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